[Hoppenstett]

... nur, eine Stromquelle am Verstärkerausgang ist quatsch.

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
... nur, eine Stromquelle am Verstärkerausgang ist quatsch.

Pentode ist kein Quatsch.

[Hoppenstett]

... IRFL4310 ist bei LT-Spice dabei


Hitparade:

1. Komplementär
2. Triode
3. Pentode

[Rumgucker]

Hab nur die:

.model FDS6680A VDMOS(Rg=3 Rd=5m Rs=1m Vto=2.2 Kp=63 Cgdmax=2n Cgdmin=1n Cgs=1.9n Cjo=1n Is=2.3p Rb=6m mfg=Fairchild Vds=30 Ron=15m Qg=27n)
.model IRF7201 VDMOS(Rg=3 Rs=12m Rd=5m Vto=2.64 Kp=26 Cgdmax=650p Cgdmin=135p Cgs=620p Cjo=620p a=1.5 Is=2.4p Rb=11m N=1.07 mfg=International_Rectifier Vds=30 Ron=30m Qg=28n)
.model IRF7303 VDMOS(Rg=3 Rs=30m Rd=10m Vto=2.3 Kp=15 Cgdmax=800p Cgdmin=10p Cgs=500p Cjo=500p a=1.5 Is=39p Rb=66m N=1.24 Vds=30 Ron=50m Qg=25n mfg=International_Rectifier)
.model NDS9410A VDMOS(Rg=3 Rs=15m Rd=8m Vto=2.7 Kp=24.5 Cgdmax=950p Cgdmin=320p Cgs=1020p Cjo=940p a=0.1 Is=.82p Rb=12m N=1.02 mfg=Fairchild Vds=30 Ron=42m Qg=50n)
.model Si4410DY VDMOS(Rg=3 Rd=3m Rs=3m Vto=2.6 Kp=60 Cgdmax=1.9n Cgdmin=50p Cgs=3.1n Cjo=1n Is=5.5p Rb=5.7m mfg=Siliconix Vds=30 Ron=15m Qg=60n)
.model Si4412DY VDMOS(Rg=3 Rd=5m Rs=8m Vto=2.5 Kp=27 Cgdmax=820p Cgdmin=50p Cgs=1050p Cjo=1000p Is=.365n Rb=0.00719 N=1.27 mfg=Siliconix Vds=30 Ron=30m Qg=29n)
.model Si4420DY VDMOS(Rg=3 Rd=2m Rs=2m Vto=2.7 Kp=100 Cgdmax=1.5n Cgdmin=200p Cgs=4.8n Cjo=2n Is=11p Rb=3.9m N=1.07 mfg=Siliconix Vds=30 Ron=13m Qg=53n)
.model Si9936DY VDMOS(Rg=3 Rd=10m Rs=2m Vto=2.3 Kp=11 Cgdmax=580p Cgdmin=20p Cgs=560p Cjo=800p Is=7.94p Rb=16.9m mfg=Siliconix Vds=30 Ron=80m Qg=35n)
.model SUD40N10-25 VDMOS(Rg=3 Rd=10m Rs=5m Vto=2.3 Kp=70 lambda=.01 Cgdmax=2n Cgdmin=100p Cgs=1.9n Cjo=1.25n Is=0.0055n Rb=0.005 mfg=Siliconix Vds=100 Ron=25m Qg=60n)
.model FDC638P VDMOS(pchan Rg=3 Rd=14m Rs=11m Vto=-1.1 Kp=22 cgdmax=1.1n cgdmin=0.08n cgs=1.0n Cjo=1n Is=5pA Rb=21m N=1.0 mfg=Fairchild Vds=-20 Ron=39m Qg=13n)
.model FDS6375 VDMOS(pchan Rg=3 Rd=8m Rs=6m Vto=-1.05 Kp=52 cgdmax=1.5n cgdmin=.4n cgs=1.9n Cjo=1n Is=0.48nA Rb=19.4m N=1.13 mfg=Fairchild Vds=-20 Ron=19m Qg=23n)
.model FDS6575 VDMOS(pchan Rg=3 Rd=4m Rs=2.4m Vto=-1.08 Kp=100 cgdmax=4.4n cgdmin=0.5n cgs=3.6n Cjo=1n Is=0.1nA Rb=10m N=1.0 mfg=Fairchild Vds=-20 Ron=10m Qg=50n)
.model Si9803DY VDMOS(pchan Rg=3 Rd=16m Rs=3m Vto=-1.4 Kp=22 cgdmax=1.4n cgdmin=.30n cgs=1.1n Cjo=1n Is=0.023nA Rb=9.6m N=1.09 mfg=Siliconix Vds=-25 Ron=33m Qg=15.8n)
.model SI3443DV VDMOS(pchan Rg=3 Rd=22m Rs=8m Vto=-1.05 Kp=12.2 cgdmax=.32n cgdmin=.16n cgs=1.1n Cjo=1n Is=0.011nA Rb=0.022 N=1.12 mfg=Siliconix Vds=-20 Ron=58m Qg=8.5n)
.model SI3445DV VDMOS(pchan Rg=3 Rd=15m Rs=6m Vto=-.85 Kp=18 cgdmax=1.0n cgdmin=.44n cgs=1.2n Cjo=.1n Is=.045nA Rb=0.026 N=1.127 mfg=Siliconix Vds=-8 Ron=34m Qg=15n)
.model FDS6570A VDMOS(Rg=3 Rd=3.0m Rs=2.3m Vto=2 Kp=95 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=3.8m mfg=Fairchild Vds=20 Ron=7.5m Qg=47n)
.model FDS6890A VDMOS(Rg=3 Rd=7.6m Rs=5.7m Vto=2 Kp=72 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=9.5m mfg=Fairchild Vds=20 Ron=19m Qg=23n)
.model FDS6670A VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.3n Cjo=0.70n Is=70p Rb=5.0m mfg=Fairchild Vds=30 Ron=10m Qg=35n)
.model FDS6680 VDMOS(Rg=3 Rd=6.0m Rs=4.5m Vto=2 Kp=80 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=7.5m mfg=Fairchild Vds=30 Ron=15m Qg=19n)
.model FDS6690A VDMOS(Rg=3 Rd=6.8m Rs=5.1m Vto=2 Kp=76 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=8.5m mfg=Fairchild Vds=30 Ron=17m Qg=17n)
.model FDS4410 VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=10.0m mfg=Fairchild Vds=30 Ron=20m Qg=13n)
.model FDS6614A VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=0.5n Cgdmin=0.06n Cgs=0.8n Cjo=0.24n Is=24p Rb=12.5m mfg=Fairchild Vds=30 Ron=25m Qg=12n)
.model FDS6612A VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=15.0m mfg=Fairchild Vds=30 Ron=30m Qg=9n)
.model FDS6912A VDMOS(Rg=3 Rd=14.0m Rs=10.5m Vto=2 Kp=40 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=17.5m mfg=Fairchild Vds=30 Ron=35m Qg=9n)
.model FDS6912 VDMOS(Rg=3 Rd=16.8m Rs=12.6m Vto=2 Kp=26 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.14n Is=14p Rb=21.0m mfg=Fairchild Vds=30 Ron=42m Qg=7n)
.model FDS6630A VDMOS(Rg=3 Rd=21.2m Rs=15.9m Vto=2 Kp=4 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.3n Cjo=0.10n Is=10p Rb=26.5m mfg=Fairchild Vds=30 Ron=53m Qg=5n)
.model FDS6930A VDMOS(Rg=3 Rd=22.0m Rs=16.5m Vto=2 Kp=0 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.3n Cjo=0.10n Is=10p Rb=27.5m mfg=Fairchild Vds=30 Ron=55m Qg=5n)
.model FDS6961A VDMOS(Rg=3 Rd=56.0m Rs=42.0m Vto=2 Kp=5 Cgdmax=0.1n Cgdmin=0.01n Cgs=0.1n Cjo=0.04n Is=4p Rb=70.0m mfg=Fairchild Vds=30 Ron=140m Qg=2n)
.model FDS5680 VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=12.5m mfg=Fairchild Vds=60 Ron=25m Qg=30n)
.model FDS5690 VDMOS(Rg=3 Rd=13.2m Rs=9.9m Vto=2 Kp=44 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=16.5m mfg=Fairchild Vds=60 Ron=33m Qg=23n)
.model FDS3570 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=2.2n Cgdmin=0.27n Cgs=3.6n Cjo=1.08n Is=108p Rb=11.0m mfg=Fairchild Vds=80 Ron=22m Qg=54n)
.model FDS3580 VDMOS(Rg=3 Rd=12.4m Rs=9.3m Vto=2 Kp=48 Cgdmax=1.4n Cgdmin=0.17n Cgs=2.3n Cjo=0.68n Is=68p Rb=15.5m mfg=Fairchild Vds=80 Ron=31m Qg=34n)
.model Si4836DY VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=2 Kp=104 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=1.5m mfg=Siliconix Vds=12 Ron=3m Qg=36n)
.model Si4838DY VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=2 Kp=104 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=1.5m mfg=Siliconix Vds=12 Ron=3m Qg=40n)
.model Si4866DY VDMOS(Rg=3 Rd=2.2m Rs=1.7m Vto=2 Kp=99 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=2.8m mfg=Siliconix Vds=12 Ron=5.5m Qg=21n)
.model Si4862DY VDMOS(Rg=3 Rd=1.3m Rs=1.0m Vto=2 Kp=103 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=1.7m mfg=Siliconix Vds=16 Ron=3.3m Qg=47n)
.model Si4864DY VDMOS(Rg=3 Rd=1.4m Rs=1.1m Vto=2 Kp=103 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=1.8m mfg=Siliconix Vds=20 Ron=3.5m Qg=47n)
.model Si4876DY VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.10n Is=110p Rb=2.5m mfg=Siliconix Vds=20 Ron=5m Qg=55n)
.model Si4466DY VDMOS(Rg=3 Rd=3.6m Rs=2.7m Vto=2 Kp=92 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=1.00n Is=100p Rb=4.5m mfg=Siliconix Vds=20 Ron=9m Qg=50n)
.model Si9426DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=6.5m mfg=Siliconix Vds=20 Ron=13m Qg=47n)
.model Si4426DY VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=12.5m mfg=Siliconix Vds=20 Ron=25m Qg=25n)
.model Si9428DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=15.0m mfg=Siliconix Vds=20 Ron=30m Qg=21n)
.model Si9804DY VDMOS(Rg=3 Rd=9.2m Rs=6.9m Vto=2 Kp=64 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.27n Is=27p Rb=11.5m mfg=Siliconix Vds=25 Ron=23m Qg=13.5n)
.model Si4442DY VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=2.5m mfg=Siliconix Vds=30 Ron=5m Qg=36n)
.model Si4364DY VDMOS(Rg=3 Rd=2.2m Rs=1.7m Vto=2 Kp=99 Cgdmax=2.5n Cgdmin=0.31n Cgs=4.1n Cjo=1.24n Is=124p Rb=2.8m mfg=Siliconix Vds=30 Ron=5.5m Qg=62n)
.model Si4842DY VDMOS(Rg=3 Rd=2.4m Rs=1.8m Vto=2 Kp=98 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=3.0m mfg=Siliconix Vds=30 Ron=6m Qg=25n)
.model Si4362DY VDMOS(Rg=3 Rd=2.5m Rs=1.9m Vto=2 Kp=98 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=3.1m mfg=Siliconix Vds=30 Ron=6.25m Qg=40n)
.model Si4404DY VDMOS(Rg=3 Rd=3.2m Rs=2.4m Vto=2 Kp=94 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=4.0m mfg=Siliconix Vds=30 Ron=8m Qg=36n)
.model Si4430DY VDMOS(Rg=3 Rd=3.2m Rs=2.4m Vto=2 Kp=94 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=4.0m mfg=Siliconix Vds=30 Ron=8m Qg=36n)
.model Si4872DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=27n)
.model Si4874DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.3n Cjo=0.70n Is=70p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=35n)
.model Si4888DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=0.7n Cgdmin=0.08n Cgs=1.1n Cjo=0.33n Is=32.6p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=16.3n)
.model Si4860DY VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=5.5m mfg=Siliconix Vds=30 Ron=11m Qg=13n)
.model Si4886DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=0.6n Cgdmin=0.07n Cgs=1.0n Cjo=0.29n Is=29p Rb=6.5m mfg=Siliconix Vds=30 Ron=13m Qg=14.5n)
.model Si4822DY VDMOS(Rg=3 Rd=6.0m Rs=4.5m Vto=2 Kp=80 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=7.5m mfg=Siliconix Vds=30 Ron=15m Qg=31n)
.model Si4884DY VDMOS(Rg=3 Rd=6.4m Rs=4.8m Vto=2 Kp=78 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.31n Is=30.6p Rb=8.0m mfg=Siliconix Vds=30 Ron=16m Qg=15.3n)
.model Si4894DY VDMOS(Rg=3 Rd=7.2m Rs=5.4m Vto=2 Kp=74 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=9.0m mfg=Siliconix Vds=30 Ron=18m Qg=20n)
.model Si4820DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=20n)
.model Si4882DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.27n Is=27p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=13.5n)
.model Si4890DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.6n Cgdmin=0.07n Cgs=0.9n Cjo=0.28n Is=28.4p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=14.2n)
.model Si4892DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.4p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=8.7n)
.model Si4416DY VDMOS(Rg=3 Rd=11.2m Rs=8.4m Vto=2 Kp=54 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=14.0m mfg=Siliconix Vds=30 Ron=28m Qg=13n)
.model Si4802DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=15.0m mfg=Siliconix Vds=30 Ron=30m Qg=13n)
.model Si4800DY VDMOS(Rg=3 Rd=7.2m Rs=5.4m Vto=2 Kp=74 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.4p Rb=9.0m mfg=Siliconix Vds=30 Ron=18m Qg=8.7n)
.model Si9410DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2 Kp=10 Cgdmax=1.0n Cgdmin=0.12n Cgs=1.6n Cjo=0.48n Is=48p Rb=25.0m mfg=Siliconix Vds=30 Ron=50m Qg=24n)
.model Si9436DY VDMOS(Rg=3 Rd=24.0m Rs=18.0m Vto=2 Kp=15 Cgdmax=0.6n Cgdmin=0.07n Cgs=0.9n Cjo=0.28n Is=28p Rb=30.0m mfg=Siliconix Vds=30 Ron=60m Qg=14n)
.model Si4840DY VDMOS(Rg=3 Rd=4.8m Rs=3.6m Vto=2 Kp=86 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.37n Is=37p Rb=6.0m mfg=Siliconix Vds=40 Ron=12m Qg=18.5n)
.model Si4470DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=1.8n Cgdmin=0.23n Cgs=3.1n Cjo=0.92n Is=92p Rb=6.5m mfg=Siliconix Vds=60 Ron=13m Qg=46n)
.model Si4450DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=15.0m mfg=Siliconix Vds=60 Ron=30m Qg=31n)
.model Si4850EY VDMOS(Rg=3 Rd=12.4m Rs=9.3m Vto=2 Kp=48 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=15.5m mfg=Siliconix Vds=60 Ron=31m Qg=18n)
.model Si4896DY VDMOS(Rg=3 Vto=2 Rd=8.8m Rs=6.6m Rb=11m Kp=66.0 Cgdmax=1.4n Cgdmin=0.34n Cgs=2.3n Cjo=0.68n Is=68p mfg=Siliconix Vds=80 Ron=22m Qg=34n)
.model Si4480DY VDMOS(Rg=3 Rd=16.0m Rs=12.0m Vto=2 Kp=30 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=20.0m mfg=Siliconix Vds=80 Ron=40m Qg=30n)
.model Si4980DY VDMOS(Rg=3 Rd=38.0m Rs=28.5m Vto=2 Kp=9 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=47.5m mfg=Siliconix Vds=80 Ron=95m Qg=15n)
.model Si4486EY VDMOS(Rg=3 Rd=11.2m Rs=8.4m Vto=2 Kp=54 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=14.0m mfg=Siliconix Vds=100 Ron=28m Qg=36n)
.model Si4484EY VDMOS(Rg=3 Rd=16.0m Rs=12.0m Vto=2 Kp=30 Cgdmax=1.0n Cgdmin=0.12n Cgs=1.6n Cjo=0.48n Is=48p Rb=20.0m mfg=Siliconix Vds=100 Ron=40m Qg=24n)
.model Si4482DY VDMOS(Rg=3 Rd=32.0m Rs=24.0m Vto=2 Kp=10 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=40.0m mfg=Siliconix Vds=100 Ron=80m Qg=30n)
.model Si4982DY VDMOS(Rg=3 Rd=72.0m Rs=54.0m Vto=2 Kp=7 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=90.0m mfg=Siliconix Vds=100 Ron=180m Qg=15n)
.model Si4848DY VDMOS(Rg=3 Rd=38.0m Rs=28.5m Vto=2 Kp=8 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=47.5m mfg=Siliconix Vds=150 Ron=95m Qg=17n)
.model Si4488DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2 Kp=10 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=25.0m mfg=Siliconix Vds=150 Ron=50m Qg=30n)
.model Si9420DY VDMOS(Rg=3 Rd=400.0m Rs=300.0m Vto=2 Kp=5 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.2p Rb=500.0m mfg=Siliconix Vds=200 Ron=1000m Qg=8.6n)
.model IRF7456 VDMOS(Rg=3 Rd=2.6m Rs=2.0m Vto=2 Kp=97 Cgdmax=1.6n Cgdmin=0.21n Cgs=2.7n Cjo=0.82n Is=82p Rb=3.3m mfg=International_Rectifier Vds=20 Ron=6.5m Qg=41n)
.model IRF7455 VDMOS(Rg=3 Rd=3.0m Rs=2.3m Vto=2 Kp=95 Cgdmax=1.5n Cgdmin=0.19n Cgs=2.5n Cjo=0.74n Is=74p Rb=3.8m mfg=International_Rectifier Vds=30 Ron=7.5m Qg=37n)
.model IRF7401 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=11.0m mfg=International_Rectifier Vds=20 Ron=22m Qg=40n)
.model IRF9410 VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=15.0m mfg=International_Rectifier Vds=30 Ron=30m Qg=18n)
.model IRF7807 VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=12.5m mfg=International_Rectifier Vds=30 Ron=25m Qg=17n)
.model IRF7403 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=1.7n Cgdmin=0.21n Cgs=2.8n Cjo=0.84n Is=84p Rb=11.0m mfg=International_Rectifier Vds=30 Ron=22m Qg=42n)
.model IRF7413A VDMOS(Rg=3 Rd=5.4m Rs=4.1m Vto=2 Kp=83 Cgdmax=2.1n Cgdmin=0.26n Cgs=3.5n Cjo=1.04n Is=104p Rb=6.8m mfg=International_Rectifier Vds=30 Ron=13.5m Qg=52n)
.model IRF7413 VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=1.4n Cgdmin=0.17n Cgs=2.3n Cjo=0.68n Is=68p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=34n)
.model IRF7805 VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=31n)
.model IRF7809A VDMOS(Rg=3 Rd=3.4m Rs=2.6m Vto=2 Kp=93 Cgdmax=2.4n Cgdmin=0.31n Cgs=4.1n Cjo=1.22n Is=122p Rb=4.3m mfg=International_Rectifier Vds=30 Ron=8.5m Qg=61n)
.model IRF7811 VDMOS(Rg=3 Rd=3.4m Rs=2.6m Vto=2 Kp=93 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=4.3m mfg=International_Rectifier Vds=30 Ron=8.5m Qg=19n)
.model IRF7832 VDMOS(Rg=3 Rd=1.6m Rs=1.2m Vto=2.2 Kp=112 Cgdmax=2.4n Cgdmin=0.17n Cgs=4.3n Cjo=0.68n Is=68p Rb=2m mfg=International_Rectifier Vds=30 Ron=4m Qg=34n)
.model BSH114 VDMOS(Rg=3 Rd=0.2 Rs=0.2 Vto=3 Kp=1.5 Cgdmax=0.2n Cgdmin=0.02n Cgs=0.3n Cjo=0.09n Is=9.2p Rb=0.3 mfg=Philips Vds=100 Ron=0.5 Qg=4.6n)
.model IRF7205 VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=35.0m mfg=International_Rectifier Vds=-30 Ron=70m Qg=27n)
.model IRF7406 VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=22.5m mfg=International_Rectifier Vds=-30 Ron=45m Qg=36n)
.model IRF7207 VDMOS(pchan Rg=3 Rd=32.0m Rs=24.0m Vto=-1 Kp=8 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=40.0m mfg=International_Rectifier Vds=-20 Ron=80m Qg=15n)
.model IRF7204 VDMOS(pchan Rg=3 Rd=24.0m Rs=18.0m Vto=-1 Kp=15 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=30.0m mfg=International_Rectifier Vds=-20 Ron=60m Qg=25n)
.model IRF7404 VDMOS(pchan Rg=3 Rd=16.0m Rs=12.0m Vto=-1 Kp=30 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=20.0m mfg=International_Rectifier Vds=-20 Ron=40m Qg=40n)
.model Si9407AEY VDMOS(pchan Rg=3 Rd=60.0m Rs=45.0m Vto=-1 Kp=5 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=75.0m mfg=Siliconix Vds=-60 Ron=150m Qg=18n)
.model IRF7210 VDMOS(pchan Rg=3 Rd=2.0m Rs=1.5m Vto=-1 Kp=100 Cgdmax=8.5n Cgdmin=1.06n Cgs=14.1n Cjo=4.24n Is=424p Rb=2.5m mfg=International_Rectifier Vds=-12 Ron=5m Qg=212n)
.model IRF7233 VDMOS(pchan Rg=3 Rd=8.0m Rs=6.0m Vto=-1 Kp=70 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=0.98n Is=98p Rb=10.0m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n)
.model IRF7220 VDMOS(pchan Rg=3 Rd=4.8m Rs=3.6m Vto=-.75 Kp=86 Cgdmax=1.5n Cgdmin=4.25n Cgs=7n Cjo=1n Is=168p Rb=6.0m mfg=International_Rectifier Vds=-12 Ron=12m Qg=84n)
.model IRF7822 VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=1.8n Cgdmin=0.22n Cgs=2.9n Cjo=0.88n Is=88p Rb=2.5m mfg=International_Rectifier Vds=30 Ron=5m Qg=44n)
.model IRF7811AV VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=17n)
.model FDS6576 VDMOS(pchan Rg=3 Rd=5.6m Rs=4.2m Vto=-1 Kp=82 Cgdmax=1.8n Cgdmin=0.22n Cgs=2.9n Cjo=0.88n Is=88p Rb=7.0m mfg=Fairchild Vds=-20 Ron=14m Qg=44n)
.model FDS6875 VDMOS(pchan Rg=3 Rd=12.0m Rs=9.0m Vto=-1 Kp=50 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=15.0m mfg=Fairchild Vds=-20 Ron=30m Qg=23n)
.model FDS9933A VDMOS(pchan Rg=3 Rd=30.0m Rs=22.5m Vto=-1 Kp=12 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.16n Is=16p Rb=37.5m mfg=Fairchild Vds=-20 Ron=75m Qg=8n)
.model FDS6675 VDMOS(pchan Rg=3 Rd=8.0m Rs=6.0m Vto=-1 Kp=70 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=10.0m mfg=Fairchild Vds=-30 Ron=20m Qg=30n)
.model FDS4435A VDMOS(pchan Rg=3 Rd=10.0m Rs=7.5m Vto=-1 Kp=60 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=12.5m mfg=Fairchild Vds=-30 Ron=25m Qg=21n)
.model FDS6685 VDMOS(pchan Rg=3 Rd=14.0m Rs=10.5m Vto=-1 Kp=40 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=17.5m mfg=Fairchild Vds=-30 Ron=35m Qg=19n)
.model FDS6975 VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=22.5m mfg=Fairchild Vds=-30 Ron=45m Qg=15n)
.model FDS4953 VDMOS(pchan Rg=3 Rd=38.0m Rs=28.5m Vto=-1 Kp=9 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.16n Is=16p Rb=47.5m mfg=Fairchild Vds=-30 Ron=95m Qg=8n)
.model Si4465DY VDMOS(pchan Rg=3 Rd=3.6m Rs=2.7m Vto=-1 Kp=92 Cgdmax=3.2n Cgdmin=0.40n Cgs=5.3n Cjo=1.60n Is=160p Rb=4.5m mfg=Siliconix Vds=-8 Ron=9m Qg=80n)
.model Si4463DY VDMOS(pchan Rg=3 Rd=5.6m Rs=4.2m Vto=-1 Kp=82 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.2n Cjo=0.96n Is=96p Rb=7.0m mfg=Siliconix Vds=-20 Ron=14m Qg=48n)
.model Si4403DY VDMOS(pchan Rg=3 Rd=6.8m Rs=5.1m Vto=-1 Kp=76 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.61n Is=61p Rb=8.5m mfg=Siliconix Vds=-20 Ron=17m Qg=30.5n)
.model Si9424DY VDMOS(pchan Rg=3 Rd=10.0m Rs=7.5m Vto=-1 Kp=60 Cgdmax=1.8n Cgdmin=0.23n Cgs=3.1n Cjo=0.92n Is=92p Rb=12.5m mfg=Siliconix Vds=-20 Ron=25m Qg=46n)
.model Si9434DY VDMOS(pchan Rg=3 Rd=16.0m Rs=12.0m Vto=-1 Kp=30 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=20.0m mfg=Siliconix Vds=-20 Ron=40m Qg=30n)
.model Si9433DY VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=22.5m mfg=Siliconix Vds=-20 Ron=45m Qg=20n)
.model Si4433DY VDMOS(pchan Rg=3 Vto=-1.2 Rd=44.0m Rs=33.0m Rb=55m Kp=30.0 Cgdmax=0.2n Cgdmin=0.07n Cgs=0.6n Cjo=0.2n Is=9p mfg=Siliconix Vds=-20 Ron=110m Qg=4.4n)
.model Si9400DY VDMOS(pchan Rg=3 Rd=160.0m Rs=120.0m Vto=-1 Kp=5 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.4n Cjo=0.11n Is=10.8p Rb=200.0m mfg=Siliconix Vds=-20 Ron=400m Qg=5.4n)
.model Si4427DY VDMOS(pchan Rg=3 Rd=4.8m Rs=3.6m Vto=-1 Kp=86 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=6.0m mfg=Siliconix Vds=-30 Ron=12m Qg=47n)
.model Si4825DY VDMOS(pchan Rg=3 Rd=8.8m Rs=6.6m Vto=-1 Kp=66 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.10n Is=110p Rb=11.0m mfg=Siliconix Vds=-30 Ron=22m Qg=55n)
.model Si4425DY VDMOS(pchan Rg=3 Rd=9.2m Rs=6.9m Vto=-1 Kp=64 Cgdmax=3.0n Cgdmin=0.37n Cgs=4.9n Cjo=1.48n Is=148p Rb=11.5m mfg=Siliconix Vds=-30 Ron=23m Qg=74n)
.model Si4835DY VDMOS(pchan Rg=3 Rd=13.2m Rs=9.9m Vto=-1 Kp=44 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=16.5m mfg=Siliconix Vds=-30 Ron=33m Qg=21n)
.model Si4431DY VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=0.9n Cgdmin=0.11n Cgs=1.5n Cjo=0.44n Is=44p Rb=35.0m mfg=Siliconix Vds=-30 Ron=70m Qg=22n)
.model Si9435DY VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=35.0m mfg=Siliconix Vds=-30 Ron=70m Qg=27n)
.model Si4401DY VDMOS(pchan Rg=3 Rd=8.8m Rs=6.6m Vto=-1 Kp=66 Cgdmax=1.5n Cgdmin=0.19n Cgs=2.5n Cjo=0.74n Is=74p Rb=11.0m mfg=Siliconix Vds=-40 Ron=22m Qg=37n)
.model IRF7343N VDMOS(Rg=3 Rd=20m Rs=15m Vto=1 Kp=10 Cgdmax=1.4n Cgdmin=0.18n Cgs=0.8n Cjo=0.72n Is=72p Rb=25m mfg=International_Rectifier Vds=55 Ron=50m Qg=36n)
.model IRF7343P VDMOS(pchan Rg=3 Rd=42m Rs=31m Vto=-1 Kp=1 Cgdmax=1.5n Cgdmin=0.19n Cgs=0.83n Cjo=0.76n Is=76p Rb=52m mfg=International_Rectifier Vds=-55 Ron=105m Qg=38n)
.model Si4940DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2.7 Kp=15 Lambda=0.02 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=25.0m mfg=Siliconix Vds=40 Ron=50m Qg=9n)
.model Si7868DP VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=1.2 Kp=50 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=1n Is=100p Rb=1.5m mfg=Siliconix Vds=20 Ron=3m Qg=50n)
.model Si7866DP VDMOS(Rg=3 Rd=1.6m Rs=1.2m Vto=1.2 Kp=50 Cgdmax=1.6n Cgdmin=0.2n Cgs=2.7n Cjo=0.8n Is=80p Rb=2m mfg=Siliconix Vds=20 Ron=4m Qg=40n)
.model uPA1706 VDMOS(Rg=3 Rd=2.8m Rs=2.1m Vto=2 Kp=96 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.12n Is=112p Rb=3.5m mfg=NEC Vds=30 Ron=7m Qg=56n)
.model uPA1707 VDMOS(Rg=3 Rd=5m Rs=3.8m Vto=2 Kp=85 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.52n Is=52p Rb=6.3m mfg=NEC Vds=30 Ron=12.5m Qg=26n)
.model IRF7468 VDMOS(Rg=3 Rd=6.4m Rs=4.8m Vto=1.8 Kp=40 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=8m mfg=International_Rectifier Vds=40 Ron=16m Qg=23n)
.model BSS123 VDMOS(Rg=3 Rd=2.4 Rs=1.8 Vto=1.6 Kp=1 Cgdmax=0.1n Cgdmin=0.01n Cgs=0.1n Cjo=0.03n Is=2.8p Rb=3.0 mfg=Fairchild Vds=100 Ron=6 Qg=1.4n)
.model FQB11P06 VDMOS(pchan Rg=3 Rd=70m Rs=52m Vto=-4 lambda=0.3 Kp=6 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=87m mfg=Fair Vds=-60 Ron=175m Qg=13n)
.model IRF1312S VDMOS(Rg=3 Rd=4m Rs=3m Vto=5.25 Kp=70 Cgdmax=3.7n Cgdmin=0.47n Cgs=6.2n Cjo=1.86n Is=186p Rb=5m mfg=International_Rectifier Vds=80 Ron=10m Qg=93n)
.model AO6408 VDMOS(Rg=3 Rd=4.8m Rs=3.6m Vto=1.0 Kp=90 Cgdmax=0.7n Cgdmin=0.25n Cgs=1n Cjo=0.36n Is=36p Rb=6m mfg=Alpha_&_Omega Vds=20 Ron=12m Qg=18n)
.model AO6407 VDMOS(pchan Rg=3 Rd=14m Rs=10m Vto=-0.8 Kp=32 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=17m mfg=AO Vds=-20 Ron=34m Qg=13n)
.model FDC637AN VDMOS(Rg=3 Rd=9.6m Rs=7.2m Vto=1.1 Kp=62 Cgdmax=1.2n Cgdmin=0.05n Cgs=1.3n Cjo=0.21n Is=21p Rb=12m mfg=Fairchild Vds=20 Ron=24m Qg=10.5n)
.model Si3460DV VDMOS(Rg=3 Rd=12m Rs=9m Vto=1 Kp=100 Cgdmax=0.5n Cgdmin=0.07n Cgs=2n Cjo=0.27n Is=27p Rb=15m mfg=Siliconix Vds=20 Ron=30m Qg=13.5n)
.model FDS6574A VDMOS(Rg=3 Rd=3m Rs=2.3m Vto=0.65 Kp=95 Cgdmax=10n Cgdmin=0.38n Cgs=5n Cjo=1.5n Is=150p Rb=3.8m mfg=Fairchild Vds=20 Ron=7.5m Qg=75n)
.model HAT2164H VDMOS(Rg=0.50 Rd=1m Rs=0.8m Vto=2 lambda=0.05 Kp=105 Cgdmax=2n Cgdmin=0.6n Cgs=3.3n Cjo=1n Is=100p Rb=1.3m mfg=Renesas Vds=30Ron=2.5m Qg=50n)
.model HAT2165H VDMOS(Rg=0.50 Rd=1m Rs=0.8m Vto=2 lambda=0.05 Kp=105 Cgdmax=1.3n Cgdmin=0.33n Cgs=2.2n Cjo=.66n Is=66p Rb=1.3m mfg=Renesas Vds=30 Ron=2.5m Qg=33n)
.model HAT2166H VDMOS(Rg=0.50 Rd=1.2m Rs=0.9m Vto=2 lambda=0.08 Kp=114 Cgdmax=1.1n Cgdmin=0.27n Cgs=1.8n Cjo=.54n Is=54p Rb=1.5m mfg=Renesas Vds=30 Ron=2.9m Qg=27n)
.model HAT2167H VDMOS(Rg=0.50 Rd=1.7m Rs=1.3m Vto=2 lambda=0.05 Kp=102 Cgdmax=.7n Cgdmin=0.17n Cgs=1.1n Cjo=.34n Is=34p Rb=2.1m mfg=Renesas Vds=30 Ron=4.2m Qg=17n)
.model HAT2168H VDMOS(Rg=0.55 Rd=2.4m Rs=1.8m Vto=2 lambda=0.05 Kp=60 Cgdmax=0.4n Cgdmin=0.2n Cgs=.7n Cjo=.22n Is=20p Rb=3m mfg=Renesas Vds=30 Ron=6m Qg=11n)
.model HAT1072H VDMOS(pchan Rg=3 Rd=1.4m Rs=1.1m Vto=-2 Kp=103 lambda=0.03 Cgdmax=4.2n Cgdmin=0.5n Cgs=4.3n Cjo=3n Is=310p Rb=1.8m mfg=Renesas Vds=-30 Ron=3.6m Qg=155n)
.model IRF6607 VDMOS(Rg=3 Rd=1.5m Rs=1.1m Vto=2 lambda=0.15 Kp=50 Cgdmax=2.0n Cgdmin=0.5n Cgs=5.3n Cjo=1n Is=100p Rb=1.9m mfg=International_Rectifier Vds=30 Ron=3.8m Qg=50n)
.model IRF6618 VDMOS(Rg=3 Rd=1.1m Rs=0.8m Vto=2.2 lambda=0.05 Kp=50 Cgdmax=1.8n Cgdmin=0.16n Cgs=4.5n Cjo=0.92n Is=92p Rb=1.4m mfg=International_Rectifier Vds=30 Ron=2.8m Qg=46n)
.model Si4920DY VDMOS(Rg=3 Vto=2.8 Rd=12.0m Rs=9.0m Rb=15m Kp=50.0 Cgdmax=1.2n Cgdmin=0.10n Cgs=2.0n Cjo=0.60n Is=60p mfg=Siliconix Vds=30 Ron=30m Qg=30n)
.model BSS145 VDMOS(Rg=3 Vto=2.8 Rd=1.4 Rs=1 Rb=1.75 Kp=0.15 Cgdmax=0.08n Cgdmin=0.001n Cgs=0.01n Cjo=0.004n Is=0.5p mfg=Infineon Vds=100 Ron=3500m Qg=2n)
.model BSS84 VDMOS(pchan Rg=3 Vto=-2.1 Rd=2.4 Rs=1.8 Rb=3 Kp=0.2 Cgdmax=0.04n Cgdmin=0.001n Cgs=0.02n Cjo=0.01n Is=2p mfg=Philips Vds=-50 Ron=6000m Qg=1n)
.model SI4467DY VDMOS(pchan Rg=3 Vto=-0.7 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=3.4n Cgdmin=1.5n Cgs=10n Cjo=3.72n Is=172p mfg=Fairchild Vds=-20 Ron=10m Qg=86n)
.model IRLML2803 VDMOS(Rg=3 Vto=2.9 Rd=0.1 Rs=75.0m Rb=125m Kp=10.0 Cgdmax=0.15n Cgdmin=0.018n Cgs=0.13n Cjo=0.07n Is=7p mfg=International_Rectifier Vds=30 Ron=250m Qg=3.3n)
.model IRL3915 VDMOS(Rg=3 Vto=1.9 Rd=5.6m Rs=4.2m Rb=7m Kp=60 lambda=0.02 Cgdmax=2.4n Cgdmin=0.4n Cgs=4.1n Cjo=1.22n Is=122p mfg=International_Rectifier Vds=55 Ron=14m Qg=61n)
.model FDS4072N3 VDMOS(Rg=3 Vto=1.3 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=1.3n Cgdmin=0.3n Cgs=5.2n Cjo=0.66n Is=66p mfg=Fairchild Vds=40 Ron=10m Qg=33n)
.model Si7409DN VDMOS(pchan Rg=3 Vto=-0.8 Rd=7.6m Rs=5.7m Rb=10m Kp=72.0 Cgdmax=1.0n Cgdmin=0.25n Cgs=1.7n Cjo=0.50n Is=50p mfg=International_Rectifier Vds=-30 Ron=19m Qg=25n)
.model Si7540DP_P VDMOS(pchan Rg=3 Vto=-1.3 Rd=16.0m Rs=12.0m Rb=20m Kp=30.0 Cgdmax=0.6n Cgdmin=0.14n Cgs=0.9n Cjo=0.28n Is=28p mfg=International_Rectifier Vds=-12 Ron=40m Qg=14n)
.model Si7540DP_N VDMOS(Rg=3 Vto=1.4 Rd=8.0m Rs=6.0m Rb=10m Kp=70.0 Cgdmax=0.5n Cgdmin=0.12n Cgs=0.8n Cjo=0.24n Is=24p mfg=International_Rectifier Vds=12 Ron=20m Qg=12n)
.model SUD40N04-10A VDMOS(Rg=3 Vto=2.9 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=1.4n Cgdmin=0.20n Cgs=1.8n Cjo=0.70n Is=70p mfg=Siliconix Vds=40 Ron=10m Qg=35n)
.model IRF7831 VDMOS(Rg=3 Vto=2.35 Rd=1.4m Rs=1.1m Rb=2m Kp=102.8 Cgdmax=1.6n Cgdmin=0.40n Cgs=2.7n Cjo=0.80n Is=80p mfg=International_Rectifier Vds=30 Ron=3.6m Qg=40n)
.model NTLMS4502N VDMOS(Rg=3 Vto=1.5 Rd=3.2m Rs=2.4m Rb=4m Kp=94.0 Cgdmax=0.1n Cgdmin=0.03n Cgs=0.2n Cjo=0.06n Is=6p mfg=Onsemi Vds=24 Ron=8m Qg=3n)
.model NTLMS4504N VDMOS(Rg=3 Vto=1.5 Rd=1.5m Rs=1.1m Rb=2m Kp=102.6 Cgdmax=1.0n Cgdmin=0.24n Cgs=1.6n Cjo=0.48n Is=48p mfg=Onsemi Vds=24 Ron=3.7m Qg=24n)
.model PH2625L VDMOS(Rg=3 Vto=1.5 Rd=1.1m Rs=0.8m Rb=1m Kp=104.6 Cgdmax=1.3n Cgdmin=0.32n Cgs=2.1n Cjo=0.64n Is=64p mfg=Philips Vds=25 Ron=2.7m Qg=32n)
.model PH6325L VDMOS(Rg=3 Vto=1.5 Rd=2.5m Rs=1.9m Rb=3m Kp=97.4 Cgdmax=0.5n Cgdmin=0.13n Cgs=0.9n Cjo=0.26n Is=26p mfg=Philips Vds=25 Ron=6.3m Qg=13n)
.model HAT2044R VDMOS(Rg=3 Vto=1 Rd=2.8m Rs=2.1m Rb=4m Kp=120 Cgdmax=1.9n Cgdmin=0.48n Cgs=3n Cjo=0.96n Is=96p mfg=Renesas Vds=30 Ron=7m Qg=48n)
.model HAT1023R VDMOS(pchan Rg=3 Vto=-1.4 Rd=12.0m Rs=9.0m Rb=15m Kp=50.0 Cgdmax=1.2n Cgdmin=0.30n Cgs=2.0n Cjo=0.60n Is=60p mfg=Renesas Vds=-20 Ron=30m Qg=30n)
.model IRF7335 VDMOS(Rg=3 Vto=1.9 Rd=5.2m Rs=3.9m Rb=7m Kp=84.0 Cgdmax=0.7n Cgdmin=0.2n Cgs=1.5n Cjo=0.26n Is=26p mfg=International_Rectifier Vds=30 Ron=13m Qg=13n)
.model IRF6609 VDMOS(Rg=3 Vto=2.6 Rd=0.8m Rs=0.6m Rb=1m Kp=106.0 Cgdmax=1.8n Cgdmin=0.86n Cgs=5.1n Cjo=0.92n Is=92p mfg=International_Rectifier Vds=20 Ron=2m Qg=46n)
.model IRF6620 VDMOS(Rg=3 Vto=2.5 Rd=1.1m Rs=0.8m Rb=1m Kp=104.6 Cgdmax=1.5n Cgdmin=0.6n Cgs=3n Cjo=0.56n Is=56p mfg=International_Rectifier Vds=20 Ron=2.7m Qg=28n)
.model IRF6623 VDMOS(Rg=3 Vto=2.35 Rd=2.3m Rs=1.7m Rb=3m Kp=98.6 Cgdmax=0.5n Cgdmin=0.2n Cgs=1.4n Cjo=0.22n Is=22p mfg=International_Rectifier Vds=20 Ron=5.7m Qg=11n)
.model IRF6691 VDMOS(Rg=3 Vto=2.5 Rd=0.7m Rs=0.5m Rb=1m Kp=106.4 Cgdmax=1.9n Cgdmin=0.7n Cgs=6.1n Cjo=0.94n Is=94p mfg=International_Rectifier Vds=20 Ron=1.8m Qg=47n)
.model FDZ5047N VDMOS(Rg=3 Vto=1.5 Rd=1.8m Rs=1.4m Rb=2m Kp=100 Cgdmax=5n Cgdmin=0.5n Cgs=3.5n Cjo=1.04n Is=104p mfg=Fairchild Vds=30 Ron=4.5m Qg=52n)
.model FDZ7064N VDMOS(Rg=3 Vto=1.4 Rd=3.2m Rs=2.4m Rb=4m Kp=90 Cgdmax=3.5n Cgdmin=0.2n Cgs=2.5n Cjo=0.62n Is=62p mfg=Fairchild Vds=30 Ron=8m Qg=31n)
.model Si7852DP VDMOS(Rg=4 Vto=4.1 Rd=6.4m Rs=4.8m Rb=8m Kp=78.0 Cgdmax=1.4n Cgdmin=0.1n Cgs=1.5n Cjo=0.68n Is=68p mfg=Siliconix Vds=80 Ron=16m Qg=34n)
.model Si4490DY VDMOS(Rg=3 Vto=4 Rd=32.0m Rs=24.0m Rb=40m Kp=30.0 Cgdmax=1n Cgdmin=0.08n Cgs=1.7n Cjo=0.45n Is=68p mfg=Siliconix Vds=200 Ron=80m Qg=34n)
.model Si4408DY VDMOS(Rg=3 Vto=2.1 Rd=1.8m Rs=1.4m Rb=2m Kp=50 Cgdmax=1.2n Cgdmin=0.5n Cgs=2.5n Cjo=0.6n Is=42p mfg=Siliconix Vds=20 Ron=4.5m Qg=21n)
.model IXFX90N30 VDMOS(Rg=3 Vto=3.6 Rd=13.2m Rs=9.9m Rb=17m Kp=90 Cgdmax=30n Cgdmin=10n Cgs=100n Cjo=30n Is=720p mfg=IXYS Vds=300 Ron=33m Qg=360n)
.model IRF1302 VDMOS(Rg=3 Vto=4 Rd=1.6m Rs=1.2m Rb=2m Kp=50 Cgdmax=5n Cgdmin=1n Cgs=2n Cjo=1n Is=160p mfg=International_Rectifier Vds=20 Ron=4m Qg=80n)
.model FDR4420A VDMOS(Rg=3 Vto=2.2 Rd=3.6m Rs=2.7m Rb=5m Kp=92.0 Cgdmax=1.6n Cgdmin=0.6n Cgs=2.2n Cjo=0.46n Is=46p mfg=Fairchild Vds=30 Ron=9m Qg=23n)
.model FDR6580 VDMOS(Rg=3 Vto=1 Rd=3.6m Rs=2.7m Rb=5m Kp=120 Cgdmax=2.8n Cgdmin=0.6n Cgs=2.7n Cjo=0.68n Is=68p mfg=Fairchild Vds=20 Ron=9m Qg=34n)
.model IRF9540 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=300 Phi=.6 Rs=64.15m Kp=10.18u W=1.5 L=2u Vto=-3.646 Rd=62.45m Rds=444.4K Cbd=2.029n Pb=.8 Mj=.5 Fc=.5 Cgso=1.033n Cgdo=469.4p Rg=.3371 Is=54.08E-18 N=2 Tt=140n)
.model IRF540 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136 Rd=22.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n Cgdo=445.7p Rg=5.557 Is=2.859p N=1 Tt=142n)
.model IRF530 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=58.53m Kp=20.73u W=.68 L=2u Vto=3.191 Rd=38.69m Rds=444.4K Cbd=1.151n Pb=.8 Mj=.5 Fc=.5 Cgso=876.7p Cgdo=261.4p Rg=4.63 Is=1.861p N=1 Tt=125n)
.model IRF9530 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=300 Phi=.6 Rs=.1576 Kp=10.57u W=1.4 L=2u Vto=-3.745 Rd=66.13m Rds=444.4K Cbd=1.249n Pb=.8 Mj=.5 Fc=.5 Cgso=1.578n Cgdo=115.5p Rg=3.519 Is=2.938E-18 N=2 Tt=290n)
.model IRF740 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=8.563m Kp=20.59u W=.78 L=2u Vto=3.657 Rd=.3915 Rds=1.778MEG Cbd=1.419n Pb=.8 Mj=.5 Fc=.5 Cgso=1.392n Cgdo=146.6p Rg=.9088 Is=17.65p N=1 Tt=570n)
.model IRF820 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=9.112m Kp=20.23u W=.2 L=2u Vto=3.858 Rd=1.962 Rds=2.222MEG Cbd=405.1p Pb=.8 Mj=.5 Fc=.5 Cgso=1.956n Cgdo=136.9p Rg=.9792 Is=248.6p N=1 Tt=560n)
.MODEL 2SJ162 PMOS (VTO=842.193M KP=20U L=2U W=21.3317M GAMMA=0 PHI=600M LAMBDA=20.7067M RD=837.199M CBD=2.96862N IS=10F CGSO=1.13517N CGDO=1.13517N TOX=0 NSUB=0 TPG=1 UO=600 RG=50 RDS=1MEG )
.MODEL DN2540 NMOS (LEVEL=3 RS=1.05 NSUB=5.0E14 DELTA=0.1 KAPPA=0.20 TPG=1 CGDO=3.1716E-10 RD=11 VTO=-1.50 VMAX=1.0E7 ETA=0.0223089 NFS=6.6E10 TOX=725E-10 LD=1.698E-9 UO=862.425 XJ=6.4666E-7 THETA=1.0E-5 CGSO=2.50E-9 L=4.0E-6 W=59E-3)

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
Hitparade:
1. Komplementär

Röhren schon wieder abgemeldet?

[Hoppenstett]

... IRFL4310 ist bei LT-Spice dabei


Hitparade:

1. Komplementär (nur bis 600V)
2. Triode
3. Pentode
.
..
99. Stromquelle

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
... IRFL4310 ist bei LT-Spice dabei

Ja. In der IV. Ich benutze die III.

Ich kopier das Modell mal um.

[Rumgucker]

Cmiller=100pF

[Hoppenstett]

... statt R2 eine Z-Diode?

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
... statt R2 eine Z-Diode?

Wozu?

Ich hab Dir gezeigt, dass Sourcefolger sehr wohl millern. Auch Dein ausgesuchter MOSFET bringt es bei 10-fach überhöhter Spannung noch auf stolze 100pF (die hohe Spannung drückt die Kapazitäten).

Diese "Streukapazitäten" liegen in mindestens gleicher Größenordnung wie die anzutreibenden Lastkapazitäten. Damit muss eine Halbbrücke mindestens 50% der Leistung nur für interne Zwecke aufbringen, ohne die Membran auch nur ein Stück bewegt zu haben.

SRPP-Konstruktionen erscheinen mir daher Humbug für den Antrieb von Staten.

[Hoppenstett]

Bislang werden Anodenwiderstände von 45K verwendet.

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
Bislang werden Anodenwiderstände von 45K verwendet.

Mir egal. Mir gings um den Beweis: Sourcefolger millern.

[Hoppenstett]

Hör doch endlich mit dem Quatsch auf.

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
Hör doch endlich mit dem Quatsch auf.

Du kannst die Beweise ignorieren. Aber Quatsch ist es nicht.

[Hoppenstett]

Gilt das auch für den Kathodenfolger?

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
Gilt das auch für den Kathodenfolger?

Aber selbstverständlich. Hier der direkte Beweis mit der Standardaddition:

[Hoppenstett]

Ich meinte Röhren ...

[Rumgucker]

Ach man... das ist doch gehüpft wie gesprungen. Das hab ich doch schon alles im Millerthread durchgekaut. Trioden millern in Anoden- und Katodenschaltung.

[Hoppenstett]

... wenn Du C1 statt nach + auf Masse legst kommt aber das Gleiche raus.

[Rumgucker]

Zitat:Original geschrieben von Hoppenstett
... wenn Du C1 statt nach + auf Masse legst kommt aber das Gleiche raus.

Natürlich. C1 soll ja nur per Standardaddition zeigen, wie stark der linke Halbleiter millert. Trotz seiner winzig kleinen Kapazitäten und der kapazitätsmindernden Versorgungshochspannung.