[Basstler]

TI hat sich der Thematik angenähert -> LMG5200

Zitat:Features

Input Voltage up to 80-V DC
Integrated 80-V, 18-m?, GaN FETs
Optimized Pinout for Easy PCB Layout
Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
Supply Rail Undervoltage Lockout
Independent High-Side and Low-Side TTL Logic Inputs
Fast Propagation Times (29.5 ns Typical)
Excellent Propagation Delay Matching (2 ns Typical)
Low Power Consumption

Description

The LMG5200, a 80-V Driver GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The LMG5200 consists of two, 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

The inputs of LMG5200 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operation range. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire-free package platform with minimized package parasitic elements. The LMG5200 is available in a 6 mm x 8 mm x 2 mm lead free package and can be easily mounted on PCBs.

The LMG5200 extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. It reduces the board requirements for maintaining clearance and creepage requirements for medium voltage GaN applications while minimizing the loop inductances to ensure fast switching.

39,50$ / 100 Units -> 0,40 $
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Mit max. 80V @ 10A kann man schon ordentlich krach machen