12.02.2013, 11:31 AM
Hab nur die:
.model FDS6680A VDMOS(Rg=3 Rd=5m Rs=1m Vto=2.2 Kp=63 Cgdmax=2n Cgdmin=1n Cgs=1.9n Cjo=1n Is=2.3p Rb=6m mfg=Fairchild Vds=30 Ron=15m Qg=27n)
.model IRF7201 VDMOS(Rg=3 Rs=12m Rd=5m Vto=2.64 Kp=26 Cgdmax=650p Cgdmin=135p Cgs=620p Cjo=620p a=1.5 Is=2.4p Rb=11m N=1.07 mfg=International_Rectifier Vds=30 Ron=30m Qg=28n)
.model IRF7303 VDMOS(Rg=3 Rs=30m Rd=10m Vto=2.3 Kp=15 Cgdmax=800p Cgdmin=10p Cgs=500p Cjo=500p a=1.5 Is=39p Rb=66m N=1.24 Vds=30 Ron=50m Qg=25n mfg=International_Rectifier)
.model NDS9410A VDMOS(Rg=3 Rs=15m Rd=8m Vto=2.7 Kp=24.5 Cgdmax=950p Cgdmin=320p Cgs=1020p Cjo=940p a=0.1 Is=.82p Rb=12m N=1.02 mfg=Fairchild Vds=30 Ron=42m Qg=50n)
.model Si4410DY VDMOS(Rg=3 Rd=3m Rs=3m Vto=2.6 Kp=60 Cgdmax=1.9n Cgdmin=50p Cgs=3.1n Cjo=1n Is=5.5p Rb=5.7m mfg=Siliconix Vds=30 Ron=15m Qg=60n)
.model Si4412DY VDMOS(Rg=3 Rd=5m Rs=8m Vto=2.5 Kp=27 Cgdmax=820p Cgdmin=50p Cgs=1050p Cjo=1000p Is=.365n Rb=0.00719 N=1.27 mfg=Siliconix Vds=30 Ron=30m Qg=29n)
.model Si4420DY VDMOS(Rg=3 Rd=2m Rs=2m Vto=2.7 Kp=100 Cgdmax=1.5n Cgdmin=200p Cgs=4.8n Cjo=2n Is=11p Rb=3.9m N=1.07 mfg=Siliconix Vds=30 Ron=13m Qg=53n)
.model Si9936DY VDMOS(Rg=3 Rd=10m Rs=2m Vto=2.3 Kp=11 Cgdmax=580p Cgdmin=20p Cgs=560p Cjo=800p Is=7.94p Rb=16.9m mfg=Siliconix Vds=30 Ron=80m Qg=35n)
.model SUD40N10-25 VDMOS(Rg=3 Rd=10m Rs=5m Vto=2.3 Kp=70 lambda=.01 Cgdmax=2n Cgdmin=100p Cgs=1.9n Cjo=1.25n Is=0.0055n Rb=0.005 mfg=Siliconix Vds=100 Ron=25m Qg=60n)
.model FDC638P VDMOS(pchan Rg=3 Rd=14m Rs=11m Vto=-1.1 Kp=22 cgdmax=1.1n cgdmin=0.08n cgs=1.0n Cjo=1n Is=5pA Rb=21m N=1.0 mfg=Fairchild Vds=-20 Ron=39m Qg=13n)
.model FDS6375 VDMOS(pchan Rg=3 Rd=8m Rs=6m Vto=-1.05 Kp=52 cgdmax=1.5n cgdmin=.4n cgs=1.9n Cjo=1n Is=0.48nA Rb=19.4m N=1.13 mfg=Fairchild Vds=-20 Ron=19m Qg=23n)
.model FDS6575 VDMOS(pchan Rg=3 Rd=4m Rs=2.4m Vto=-1.08 Kp=100 cgdmax=4.4n cgdmin=0.5n cgs=3.6n Cjo=1n Is=0.1nA Rb=10m N=1.0 mfg=Fairchild Vds=-20 Ron=10m Qg=50n)
.model Si9803DY VDMOS(pchan Rg=3 Rd=16m Rs=3m Vto=-1.4 Kp=22 cgdmax=1.4n cgdmin=.30n cgs=1.1n Cjo=1n Is=0.023nA Rb=9.6m N=1.09 mfg=Siliconix Vds=-25 Ron=33m Qg=15.8n)
.model SI3443DV VDMOS(pchan Rg=3 Rd=22m Rs=8m Vto=-1.05 Kp=12.2 cgdmax=.32n cgdmin=.16n cgs=1.1n Cjo=1n Is=0.011nA Rb=0.022 N=1.12 mfg=Siliconix Vds=-20 Ron=58m Qg=8.5n)
.model SI3445DV VDMOS(pchan Rg=3 Rd=15m Rs=6m Vto=-.85 Kp=18 cgdmax=1.0n cgdmin=.44n cgs=1.2n Cjo=.1n Is=.045nA Rb=0.026 N=1.127 mfg=Siliconix Vds=-8 Ron=34m Qg=15n)
.model FDS6570A VDMOS(Rg=3 Rd=3.0m Rs=2.3m Vto=2 Kp=95 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=3.8m mfg=Fairchild Vds=20 Ron=7.5m Qg=47n)
.model FDS6890A VDMOS(Rg=3 Rd=7.6m Rs=5.7m Vto=2 Kp=72 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=9.5m mfg=Fairchild Vds=20 Ron=19m Qg=23n)
.model FDS6670A VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.3n Cjo=0.70n Is=70p Rb=5.0m mfg=Fairchild Vds=30 Ron=10m Qg=35n)
.model FDS6680 VDMOS(Rg=3 Rd=6.0m Rs=4.5m Vto=2 Kp=80 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=7.5m mfg=Fairchild Vds=30 Ron=15m Qg=19n)
.model FDS6690A VDMOS(Rg=3 Rd=6.8m Rs=5.1m Vto=2 Kp=76 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=8.5m mfg=Fairchild Vds=30 Ron=17m Qg=17n)
.model FDS4410 VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=10.0m mfg=Fairchild Vds=30 Ron=20m Qg=13n)
.model FDS6614A VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=0.5n Cgdmin=0.06n Cgs=0.8n Cjo=0.24n Is=24p Rb=12.5m mfg=Fairchild Vds=30 Ron=25m Qg=12n)
.model FDS6612A VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=15.0m mfg=Fairchild Vds=30 Ron=30m Qg=9n)
.model FDS6912A VDMOS(Rg=3 Rd=14.0m Rs=10.5m Vto=2 Kp=40 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=17.5m mfg=Fairchild Vds=30 Ron=35m Qg=9n)
.model FDS6912 VDMOS(Rg=3 Rd=16.8m Rs=12.6m Vto=2 Kp=26 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.14n Is=14p Rb=21.0m mfg=Fairchild Vds=30 Ron=42m Qg=7n)
.model FDS6630A VDMOS(Rg=3 Rd=21.2m Rs=15.9m Vto=2 Kp=4 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.3n Cjo=0.10n Is=10p Rb=26.5m mfg=Fairchild Vds=30 Ron=53m Qg=5n)
.model FDS6930A VDMOS(Rg=3 Rd=22.0m Rs=16.5m Vto=2 Kp=0 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.3n Cjo=0.10n Is=10p Rb=27.5m mfg=Fairchild Vds=30 Ron=55m Qg=5n)
.model FDS6961A VDMOS(Rg=3 Rd=56.0m Rs=42.0m Vto=2 Kp=5 Cgdmax=0.1n Cgdmin=0.01n Cgs=0.1n Cjo=0.04n Is=4p Rb=70.0m mfg=Fairchild Vds=30 Ron=140m Qg=2n)
.model FDS5680 VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=12.5m mfg=Fairchild Vds=60 Ron=25m Qg=30n)
.model FDS5690 VDMOS(Rg=3 Rd=13.2m Rs=9.9m Vto=2 Kp=44 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=16.5m mfg=Fairchild Vds=60 Ron=33m Qg=23n)
.model FDS3570 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=2.2n Cgdmin=0.27n Cgs=3.6n Cjo=1.08n Is=108p Rb=11.0m mfg=Fairchild Vds=80 Ron=22m Qg=54n)
.model FDS3580 VDMOS(Rg=3 Rd=12.4m Rs=9.3m Vto=2 Kp=48 Cgdmax=1.4n Cgdmin=0.17n Cgs=2.3n Cjo=0.68n Is=68p Rb=15.5m mfg=Fairchild Vds=80 Ron=31m Qg=34n)
.model Si4836DY VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=2 Kp=104 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=1.5m mfg=Siliconix Vds=12 Ron=3m Qg=36n)
.model Si4838DY VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=2 Kp=104 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=1.5m mfg=Siliconix Vds=12 Ron=3m Qg=40n)
.model Si4866DY VDMOS(Rg=3 Rd=2.2m Rs=1.7m Vto=2 Kp=99 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=2.8m mfg=Siliconix Vds=12 Ron=5.5m Qg=21n)
.model Si4862DY VDMOS(Rg=3 Rd=1.3m Rs=1.0m Vto=2 Kp=103 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=1.7m mfg=Siliconix Vds=16 Ron=3.3m Qg=47n)
.model Si4864DY VDMOS(Rg=3 Rd=1.4m Rs=1.1m Vto=2 Kp=103 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=1.8m mfg=Siliconix Vds=20 Ron=3.5m Qg=47n)
.model Si4876DY VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.10n Is=110p Rb=2.5m mfg=Siliconix Vds=20 Ron=5m Qg=55n)
.model Si4466DY VDMOS(Rg=3 Rd=3.6m Rs=2.7m Vto=2 Kp=92 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=1.00n Is=100p Rb=4.5m mfg=Siliconix Vds=20 Ron=9m Qg=50n)
.model Si9426DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=6.5m mfg=Siliconix Vds=20 Ron=13m Qg=47n)
.model Si4426DY VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=12.5m mfg=Siliconix Vds=20 Ron=25m Qg=25n)
.model Si9428DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=15.0m mfg=Siliconix Vds=20 Ron=30m Qg=21n)
.model Si9804DY VDMOS(Rg=3 Rd=9.2m Rs=6.9m Vto=2 Kp=64 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.27n Is=27p Rb=11.5m mfg=Siliconix Vds=25 Ron=23m Qg=13.5n)
.model Si4442DY VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=2.5m mfg=Siliconix Vds=30 Ron=5m Qg=36n)
.model Si4364DY VDMOS(Rg=3 Rd=2.2m Rs=1.7m Vto=2 Kp=99 Cgdmax=2.5n Cgdmin=0.31n Cgs=4.1n Cjo=1.24n Is=124p Rb=2.8m mfg=Siliconix Vds=30 Ron=5.5m Qg=62n)
.model Si4842DY VDMOS(Rg=3 Rd=2.4m Rs=1.8m Vto=2 Kp=98 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=3.0m mfg=Siliconix Vds=30 Ron=6m Qg=25n)
.model Si4362DY VDMOS(Rg=3 Rd=2.5m Rs=1.9m Vto=2 Kp=98 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=3.1m mfg=Siliconix Vds=30 Ron=6.25m Qg=40n)
.model Si4404DY VDMOS(Rg=3 Rd=3.2m Rs=2.4m Vto=2 Kp=94 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=4.0m mfg=Siliconix Vds=30 Ron=8m Qg=36n)
.model Si4430DY VDMOS(Rg=3 Rd=3.2m Rs=2.4m Vto=2 Kp=94 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=4.0m mfg=Siliconix Vds=30 Ron=8m Qg=36n)
.model Si4872DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=27n)
.model Si4874DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.3n Cjo=0.70n Is=70p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=35n)
.model Si4888DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=0.7n Cgdmin=0.08n Cgs=1.1n Cjo=0.33n Is=32.6p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=16.3n)
.model Si4860DY VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=5.5m mfg=Siliconix Vds=30 Ron=11m Qg=13n)
.model Si4886DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=0.6n Cgdmin=0.07n Cgs=1.0n Cjo=0.29n Is=29p Rb=6.5m mfg=Siliconix Vds=30 Ron=13m Qg=14.5n)
.model Si4822DY VDMOS(Rg=3 Rd=6.0m Rs=4.5m Vto=2 Kp=80 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=7.5m mfg=Siliconix Vds=30 Ron=15m Qg=31n)
.model Si4884DY VDMOS(Rg=3 Rd=6.4m Rs=4.8m Vto=2 Kp=78 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.31n Is=30.6p Rb=8.0m mfg=Siliconix Vds=30 Ron=16m Qg=15.3n)
.model Si4894DY VDMOS(Rg=3 Rd=7.2m Rs=5.4m Vto=2 Kp=74 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=9.0m mfg=Siliconix Vds=30 Ron=18m Qg=20n)
.model Si4820DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=20n)
.model Si4882DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.27n Is=27p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=13.5n)
.model Si4890DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.6n Cgdmin=0.07n Cgs=0.9n Cjo=0.28n Is=28.4p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=14.2n)
.model Si4892DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.4p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=8.7n)
.model Si4416DY VDMOS(Rg=3 Rd=11.2m Rs=8.4m Vto=2 Kp=54 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=14.0m mfg=Siliconix Vds=30 Ron=28m Qg=13n)
.model Si4802DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=15.0m mfg=Siliconix Vds=30 Ron=30m Qg=13n)
.model Si4800DY VDMOS(Rg=3 Rd=7.2m Rs=5.4m Vto=2 Kp=74 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.4p Rb=9.0m mfg=Siliconix Vds=30 Ron=18m Qg=8.7n)
.model Si9410DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2 Kp=10 Cgdmax=1.0n Cgdmin=0.12n Cgs=1.6n Cjo=0.48n Is=48p Rb=25.0m mfg=Siliconix Vds=30 Ron=50m Qg=24n)
.model Si9436DY VDMOS(Rg=3 Rd=24.0m Rs=18.0m Vto=2 Kp=15 Cgdmax=0.6n Cgdmin=0.07n Cgs=0.9n Cjo=0.28n Is=28p Rb=30.0m mfg=Siliconix Vds=30 Ron=60m Qg=14n)
.model Si4840DY VDMOS(Rg=3 Rd=4.8m Rs=3.6m Vto=2 Kp=86 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.37n Is=37p Rb=6.0m mfg=Siliconix Vds=40 Ron=12m Qg=18.5n)
.model Si4470DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=1.8n Cgdmin=0.23n Cgs=3.1n Cjo=0.92n Is=92p Rb=6.5m mfg=Siliconix Vds=60 Ron=13m Qg=46n)
.model Si4450DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=15.0m mfg=Siliconix Vds=60 Ron=30m Qg=31n)
.model Si4850EY VDMOS(Rg=3 Rd=12.4m Rs=9.3m Vto=2 Kp=48 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=15.5m mfg=Siliconix Vds=60 Ron=31m Qg=18n)
.model Si4896DY VDMOS(Rg=3 Vto=2 Rd=8.8m Rs=6.6m Rb=11m Kp=66.0 Cgdmax=1.4n Cgdmin=0.34n Cgs=2.3n Cjo=0.68n Is=68p mfg=Siliconix Vds=80 Ron=22m Qg=34n)
.model Si4480DY VDMOS(Rg=3 Rd=16.0m Rs=12.0m Vto=2 Kp=30 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=20.0m mfg=Siliconix Vds=80 Ron=40m Qg=30n)
.model Si4980DY VDMOS(Rg=3 Rd=38.0m Rs=28.5m Vto=2 Kp=9 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=47.5m mfg=Siliconix Vds=80 Ron=95m Qg=15n)
.model Si4486EY VDMOS(Rg=3 Rd=11.2m Rs=8.4m Vto=2 Kp=54 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=14.0m mfg=Siliconix Vds=100 Ron=28m Qg=36n)
.model Si4484EY VDMOS(Rg=3 Rd=16.0m Rs=12.0m Vto=2 Kp=30 Cgdmax=1.0n Cgdmin=0.12n Cgs=1.6n Cjo=0.48n Is=48p Rb=20.0m mfg=Siliconix Vds=100 Ron=40m Qg=24n)
.model Si4482DY VDMOS(Rg=3 Rd=32.0m Rs=24.0m Vto=2 Kp=10 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=40.0m mfg=Siliconix Vds=100 Ron=80m Qg=30n)
.model Si4982DY VDMOS(Rg=3 Rd=72.0m Rs=54.0m Vto=2 Kp=7 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=90.0m mfg=Siliconix Vds=100 Ron=180m Qg=15n)
.model Si4848DY VDMOS(Rg=3 Rd=38.0m Rs=28.5m Vto=2 Kp=8 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=47.5m mfg=Siliconix Vds=150 Ron=95m Qg=17n)
.model Si4488DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2 Kp=10 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=25.0m mfg=Siliconix Vds=150 Ron=50m Qg=30n)
.model Si9420DY VDMOS(Rg=3 Rd=400.0m Rs=300.0m Vto=2 Kp=5 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.2p Rb=500.0m mfg=Siliconix Vds=200 Ron=1000m Qg=8.6n)
.model IRF7456 VDMOS(Rg=3 Rd=2.6m Rs=2.0m Vto=2 Kp=97 Cgdmax=1.6n Cgdmin=0.21n Cgs=2.7n Cjo=0.82n Is=82p Rb=3.3m mfg=International_Rectifier Vds=20 Ron=6.5m Qg=41n)
.model IRF7455 VDMOS(Rg=3 Rd=3.0m Rs=2.3m Vto=2 Kp=95 Cgdmax=1.5n Cgdmin=0.19n Cgs=2.5n Cjo=0.74n Is=74p Rb=3.8m mfg=International_Rectifier Vds=30 Ron=7.5m Qg=37n)
.model IRF7401 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=11.0m mfg=International_Rectifier Vds=20 Ron=22m Qg=40n)
.model IRF9410 VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=15.0m mfg=International_Rectifier Vds=30 Ron=30m Qg=18n)
.model IRF7807 VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=12.5m mfg=International_Rectifier Vds=30 Ron=25m Qg=17n)
.model IRF7403 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=1.7n Cgdmin=0.21n Cgs=2.8n Cjo=0.84n Is=84p Rb=11.0m mfg=International_Rectifier Vds=30 Ron=22m Qg=42n)
.model IRF7413A VDMOS(Rg=3 Rd=5.4m Rs=4.1m Vto=2 Kp=83 Cgdmax=2.1n Cgdmin=0.26n Cgs=3.5n Cjo=1.04n Is=104p Rb=6.8m mfg=International_Rectifier Vds=30 Ron=13.5m Qg=52n)
.model IRF7413 VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=1.4n Cgdmin=0.17n Cgs=2.3n Cjo=0.68n Is=68p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=34n)
.model IRF7805 VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=31n)
.model IRF7809A VDMOS(Rg=3 Rd=3.4m Rs=2.6m Vto=2 Kp=93 Cgdmax=2.4n Cgdmin=0.31n Cgs=4.1n Cjo=1.22n Is=122p Rb=4.3m mfg=International_Rectifier Vds=30 Ron=8.5m Qg=61n)
.model IRF7811 VDMOS(Rg=3 Rd=3.4m Rs=2.6m Vto=2 Kp=93 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=4.3m mfg=International_Rectifier Vds=30 Ron=8.5m Qg=19n)
.model IRF7832 VDMOS(Rg=3 Rd=1.6m Rs=1.2m Vto=2.2 Kp=112 Cgdmax=2.4n Cgdmin=0.17n Cgs=4.3n Cjo=0.68n Is=68p Rb=2m mfg=International_Rectifier Vds=30 Ron=4m Qg=34n)
.model BSH114 VDMOS(Rg=3 Rd=0.2 Rs=0.2 Vto=3 Kp=1.5 Cgdmax=0.2n Cgdmin=0.02n Cgs=0.3n Cjo=0.09n Is=9.2p Rb=0.3 mfg=Philips Vds=100 Ron=0.5 Qg=4.6n)
.model IRF7205 VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=35.0m mfg=International_Rectifier Vds=-30 Ron=70m Qg=27n)
.model IRF7406 VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=22.5m mfg=International_Rectifier Vds=-30 Ron=45m Qg=36n)
.model IRF7207 VDMOS(pchan Rg=3 Rd=32.0m Rs=24.0m Vto=-1 Kp=8 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=40.0m mfg=International_Rectifier Vds=-20 Ron=80m Qg=15n)
.model IRF7204 VDMOS(pchan Rg=3 Rd=24.0m Rs=18.0m Vto=-1 Kp=15 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=30.0m mfg=International_Rectifier Vds=-20 Ron=60m Qg=25n)
.model IRF7404 VDMOS(pchan Rg=3 Rd=16.0m Rs=12.0m Vto=-1 Kp=30 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=20.0m mfg=International_Rectifier Vds=-20 Ron=40m Qg=40n)
.model Si9407AEY VDMOS(pchan Rg=3 Rd=60.0m Rs=45.0m Vto=-1 Kp=5 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=75.0m mfg=Siliconix Vds=-60 Ron=150m Qg=18n)
.model IRF7210 VDMOS(pchan Rg=3 Rd=2.0m Rs=1.5m Vto=-1 Kp=100 Cgdmax=8.5n Cgdmin=1.06n Cgs=14.1n Cjo=4.24n Is=424p Rb=2.5m mfg=International_Rectifier Vds=-12 Ron=5m Qg=212n)
.model IRF7233 VDMOS(pchan Rg=3 Rd=8.0m Rs=6.0m Vto=-1 Kp=70 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=0.98n Is=98p Rb=10.0m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n)
.model IRF7220 VDMOS(pchan Rg=3 Rd=4.8m Rs=3.6m Vto=-.75 Kp=86 Cgdmax=1.5n Cgdmin=4.25n Cgs=7n Cjo=1n Is=168p Rb=6.0m mfg=International_Rectifier Vds=-12 Ron=12m Qg=84n)
.model IRF7822 VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=1.8n Cgdmin=0.22n Cgs=2.9n Cjo=0.88n Is=88p Rb=2.5m mfg=International_Rectifier Vds=30 Ron=5m Qg=44n)
.model IRF7811AV VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=17n)
.model FDS6576 VDMOS(pchan Rg=3 Rd=5.6m Rs=4.2m Vto=-1 Kp=82 Cgdmax=1.8n Cgdmin=0.22n Cgs=2.9n Cjo=0.88n Is=88p Rb=7.0m mfg=Fairchild Vds=-20 Ron=14m Qg=44n)
.model FDS6875 VDMOS(pchan Rg=3 Rd=12.0m Rs=9.0m Vto=-1 Kp=50 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=15.0m mfg=Fairchild Vds=-20 Ron=30m Qg=23n)
.model FDS9933A VDMOS(pchan Rg=3 Rd=30.0m Rs=22.5m Vto=-1 Kp=12 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.16n Is=16p Rb=37.5m mfg=Fairchild Vds=-20 Ron=75m Qg=8n)
.model FDS6675 VDMOS(pchan Rg=3 Rd=8.0m Rs=6.0m Vto=-1 Kp=70 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=10.0m mfg=Fairchild Vds=-30 Ron=20m Qg=30n)
.model FDS4435A VDMOS(pchan Rg=3 Rd=10.0m Rs=7.5m Vto=-1 Kp=60 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=12.5m mfg=Fairchild Vds=-30 Ron=25m Qg=21n)
.model FDS6685 VDMOS(pchan Rg=3 Rd=14.0m Rs=10.5m Vto=-1 Kp=40 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=17.5m mfg=Fairchild Vds=-30 Ron=35m Qg=19n)
.model FDS6975 VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=22.5m mfg=Fairchild Vds=-30 Ron=45m Qg=15n)
.model FDS4953 VDMOS(pchan Rg=3 Rd=38.0m Rs=28.5m Vto=-1 Kp=9 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.16n Is=16p Rb=47.5m mfg=Fairchild Vds=-30 Ron=95m Qg=8n)
.model Si4465DY VDMOS(pchan Rg=3 Rd=3.6m Rs=2.7m Vto=-1 Kp=92 Cgdmax=3.2n Cgdmin=0.40n Cgs=5.3n Cjo=1.60n Is=160p Rb=4.5m mfg=Siliconix Vds=-8 Ron=9m Qg=80n)
.model Si4463DY VDMOS(pchan Rg=3 Rd=5.6m Rs=4.2m Vto=-1 Kp=82 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.2n Cjo=0.96n Is=96p Rb=7.0m mfg=Siliconix Vds=-20 Ron=14m Qg=48n)
.model Si4403DY VDMOS(pchan Rg=3 Rd=6.8m Rs=5.1m Vto=-1 Kp=76 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.61n Is=61p Rb=8.5m mfg=Siliconix Vds=-20 Ron=17m Qg=30.5n)
.model Si9424DY VDMOS(pchan Rg=3 Rd=10.0m Rs=7.5m Vto=-1 Kp=60 Cgdmax=1.8n Cgdmin=0.23n Cgs=3.1n Cjo=0.92n Is=92p Rb=12.5m mfg=Siliconix Vds=-20 Ron=25m Qg=46n)
.model Si9434DY VDMOS(pchan Rg=3 Rd=16.0m Rs=12.0m Vto=-1 Kp=30 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=20.0m mfg=Siliconix Vds=-20 Ron=40m Qg=30n)
.model Si9433DY VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=22.5m mfg=Siliconix Vds=-20 Ron=45m Qg=20n)
.model Si4433DY VDMOS(pchan Rg=3 Vto=-1.2 Rd=44.0m Rs=33.0m Rb=55m Kp=30.0 Cgdmax=0.2n Cgdmin=0.07n Cgs=0.6n Cjo=0.2n Is=9p mfg=Siliconix Vds=-20 Ron=110m Qg=4.4n)
.model Si9400DY VDMOS(pchan Rg=3 Rd=160.0m Rs=120.0m Vto=-1 Kp=5 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.4n Cjo=0.11n Is=10.8p Rb=200.0m mfg=Siliconix Vds=-20 Ron=400m Qg=5.4n)
.model Si4427DY VDMOS(pchan Rg=3 Rd=4.8m Rs=3.6m Vto=-1 Kp=86 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=6.0m mfg=Siliconix Vds=-30 Ron=12m Qg=47n)
.model Si4825DY VDMOS(pchan Rg=3 Rd=8.8m Rs=6.6m Vto=-1 Kp=66 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.10n Is=110p Rb=11.0m mfg=Siliconix Vds=-30 Ron=22m Qg=55n)
.model Si4425DY VDMOS(pchan Rg=3 Rd=9.2m Rs=6.9m Vto=-1 Kp=64 Cgdmax=3.0n Cgdmin=0.37n Cgs=4.9n Cjo=1.48n Is=148p Rb=11.5m mfg=Siliconix Vds=-30 Ron=23m Qg=74n)
.model Si4835DY VDMOS(pchan Rg=3 Rd=13.2m Rs=9.9m Vto=-1 Kp=44 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=16.5m mfg=Siliconix Vds=-30 Ron=33m Qg=21n)
.model Si4431DY VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=0.9n Cgdmin=0.11n Cgs=1.5n Cjo=0.44n Is=44p Rb=35.0m mfg=Siliconix Vds=-30 Ron=70m Qg=22n)
.model Si9435DY VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=35.0m mfg=Siliconix Vds=-30 Ron=70m Qg=27n)
.model Si4401DY VDMOS(pchan Rg=3 Rd=8.8m Rs=6.6m Vto=-1 Kp=66 Cgdmax=1.5n Cgdmin=0.19n Cgs=2.5n Cjo=0.74n Is=74p Rb=11.0m mfg=Siliconix Vds=-40 Ron=22m Qg=37n)
.model IRF7343N VDMOS(Rg=3 Rd=20m Rs=15m Vto=1 Kp=10 Cgdmax=1.4n Cgdmin=0.18n Cgs=0.8n Cjo=0.72n Is=72p Rb=25m mfg=International_Rectifier Vds=55 Ron=50m Qg=36n)
.model IRF7343P VDMOS(pchan Rg=3 Rd=42m Rs=31m Vto=-1 Kp=1 Cgdmax=1.5n Cgdmin=0.19n Cgs=0.83n Cjo=0.76n Is=76p Rb=52m mfg=International_Rectifier Vds=-55 Ron=105m Qg=38n)
.model Si4940DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2.7 Kp=15 Lambda=0.02 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=25.0m mfg=Siliconix Vds=40 Ron=50m Qg=9n)
.model Si7868DP VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=1.2 Kp=50 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=1n Is=100p Rb=1.5m mfg=Siliconix Vds=20 Ron=3m Qg=50n)
.model Si7866DP VDMOS(Rg=3 Rd=1.6m Rs=1.2m Vto=1.2 Kp=50 Cgdmax=1.6n Cgdmin=0.2n Cgs=2.7n Cjo=0.8n Is=80p Rb=2m mfg=Siliconix Vds=20 Ron=4m Qg=40n)
.model uPA1706 VDMOS(Rg=3 Rd=2.8m Rs=2.1m Vto=2 Kp=96 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.12n Is=112p Rb=3.5m mfg=NEC Vds=30 Ron=7m Qg=56n)
.model uPA1707 VDMOS(Rg=3 Rd=5m Rs=3.8m Vto=2 Kp=85 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.52n Is=52p Rb=6.3m mfg=NEC Vds=30 Ron=12.5m Qg=26n)
.model IRF7468 VDMOS(Rg=3 Rd=6.4m Rs=4.8m Vto=1.8 Kp=40 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=8m mfg=International_Rectifier Vds=40 Ron=16m Qg=23n)
.model BSS123 VDMOS(Rg=3 Rd=2.4 Rs=1.8 Vto=1.6 Kp=1 Cgdmax=0.1n Cgdmin=0.01n Cgs=0.1n Cjo=0.03n Is=2.8p Rb=3.0 mfg=Fairchild Vds=100 Ron=6 Qg=1.4n)
.model FQB11P06 VDMOS(pchan Rg=3 Rd=70m Rs=52m Vto=-4 lambda=0.3 Kp=6 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=87m mfg=Fair Vds=-60 Ron=175m Qg=13n)
.model IRF1312S VDMOS(Rg=3 Rd=4m Rs=3m Vto=5.25 Kp=70 Cgdmax=3.7n Cgdmin=0.47n Cgs=6.2n Cjo=1.86n Is=186p Rb=5m mfg=International_Rectifier Vds=80 Ron=10m Qg=93n)
.model AO6408 VDMOS(Rg=3 Rd=4.8m Rs=3.6m Vto=1.0 Kp=90 Cgdmax=0.7n Cgdmin=0.25n Cgs=1n Cjo=0.36n Is=36p Rb=6m mfg=Alpha_&_Omega Vds=20 Ron=12m Qg=18n)
.model AO6407 VDMOS(pchan Rg=3 Rd=14m Rs=10m Vto=-0.8 Kp=32 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=17m mfg=AO Vds=-20 Ron=34m Qg=13n)
.model FDC637AN VDMOS(Rg=3 Rd=9.6m Rs=7.2m Vto=1.1 Kp=62 Cgdmax=1.2n Cgdmin=0.05n Cgs=1.3n Cjo=0.21n Is=21p Rb=12m mfg=Fairchild Vds=20 Ron=24m Qg=10.5n)
.model Si3460DV VDMOS(Rg=3 Rd=12m Rs=9m Vto=1 Kp=100 Cgdmax=0.5n Cgdmin=0.07n Cgs=2n Cjo=0.27n Is=27p Rb=15m mfg=Siliconix Vds=20 Ron=30m Qg=13.5n)
.model FDS6574A VDMOS(Rg=3 Rd=3m Rs=2.3m Vto=0.65 Kp=95 Cgdmax=10n Cgdmin=0.38n Cgs=5n Cjo=1.5n Is=150p Rb=3.8m mfg=Fairchild Vds=20 Ron=7.5m Qg=75n)
.model HAT2164H VDMOS(Rg=0.50 Rd=1m Rs=0.8m Vto=2 lambda=0.05 Kp=105 Cgdmax=2n Cgdmin=0.6n Cgs=3.3n Cjo=1n Is=100p Rb=1.3m mfg=Renesas Vds=30Ron=2.5m Qg=50n)
.model HAT2165H VDMOS(Rg=0.50 Rd=1m Rs=0.8m Vto=2 lambda=0.05 Kp=105 Cgdmax=1.3n Cgdmin=0.33n Cgs=2.2n Cjo=.66n Is=66p Rb=1.3m mfg=Renesas Vds=30 Ron=2.5m Qg=33n)
.model HAT2166H VDMOS(Rg=0.50 Rd=1.2m Rs=0.9m Vto=2 lambda=0.08 Kp=114 Cgdmax=1.1n Cgdmin=0.27n Cgs=1.8n Cjo=.54n Is=54p Rb=1.5m mfg=Renesas Vds=30 Ron=2.9m Qg=27n)
.model HAT2167H VDMOS(Rg=0.50 Rd=1.7m Rs=1.3m Vto=2 lambda=0.05 Kp=102 Cgdmax=.7n Cgdmin=0.17n Cgs=1.1n Cjo=.34n Is=34p Rb=2.1m mfg=Renesas Vds=30 Ron=4.2m Qg=17n)
.model HAT2168H VDMOS(Rg=0.55 Rd=2.4m Rs=1.8m Vto=2 lambda=0.05 Kp=60 Cgdmax=0.4n Cgdmin=0.2n Cgs=.7n Cjo=.22n Is=20p Rb=3m mfg=Renesas Vds=30 Ron=6m Qg=11n)
.model HAT1072H VDMOS(pchan Rg=3 Rd=1.4m Rs=1.1m Vto=-2 Kp=103 lambda=0.03 Cgdmax=4.2n Cgdmin=0.5n Cgs=4.3n Cjo=3n Is=310p Rb=1.8m mfg=Renesas Vds=-30 Ron=3.6m Qg=155n)
.model IRF6607 VDMOS(Rg=3 Rd=1.5m Rs=1.1m Vto=2 lambda=0.15 Kp=50 Cgdmax=2.0n Cgdmin=0.5n Cgs=5.3n Cjo=1n Is=100p Rb=1.9m mfg=International_Rectifier Vds=30 Ron=3.8m Qg=50n)
.model IRF6618 VDMOS(Rg=3 Rd=1.1m Rs=0.8m Vto=2.2 lambda=0.05 Kp=50 Cgdmax=1.8n Cgdmin=0.16n Cgs=4.5n Cjo=0.92n Is=92p Rb=1.4m mfg=International_Rectifier Vds=30 Ron=2.8m Qg=46n)
.model Si4920DY VDMOS(Rg=3 Vto=2.8 Rd=12.0m Rs=9.0m Rb=15m Kp=50.0 Cgdmax=1.2n Cgdmin=0.10n Cgs=2.0n Cjo=0.60n Is=60p mfg=Siliconix Vds=30 Ron=30m Qg=30n)
.model BSS145 VDMOS(Rg=3 Vto=2.8 Rd=1.4 Rs=1 Rb=1.75 Kp=0.15 Cgdmax=0.08n Cgdmin=0.001n Cgs=0.01n Cjo=0.004n Is=0.5p mfg=Infineon Vds=100 Ron=3500m Qg=2n)
.model BSS84 VDMOS(pchan Rg=3 Vto=-2.1 Rd=2.4 Rs=1.8 Rb=3 Kp=0.2 Cgdmax=0.04n Cgdmin=0.001n Cgs=0.02n Cjo=0.01n Is=2p mfg=Philips Vds=-50 Ron=6000m Qg=1n)
.model SI4467DY VDMOS(pchan Rg=3 Vto=-0.7 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=3.4n Cgdmin=1.5n Cgs=10n Cjo=3.72n Is=172p mfg=Fairchild Vds=-20 Ron=10m Qg=86n)
.model IRLML2803 VDMOS(Rg=3 Vto=2.9 Rd=0.1 Rs=75.0m Rb=125m Kp=10.0 Cgdmax=0.15n Cgdmin=0.018n Cgs=0.13n Cjo=0.07n Is=7p mfg=International_Rectifier Vds=30 Ron=250m Qg=3.3n)
.model IRL3915 VDMOS(Rg=3 Vto=1.9 Rd=5.6m Rs=4.2m Rb=7m Kp=60 lambda=0.02 Cgdmax=2.4n Cgdmin=0.4n Cgs=4.1n Cjo=1.22n Is=122p mfg=International_Rectifier Vds=55 Ron=14m Qg=61n)
.model FDS4072N3 VDMOS(Rg=3 Vto=1.3 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=1.3n Cgdmin=0.3n Cgs=5.2n Cjo=0.66n Is=66p mfg=Fairchild Vds=40 Ron=10m Qg=33n)
.model Si7409DN VDMOS(pchan Rg=3 Vto=-0.8 Rd=7.6m Rs=5.7m Rb=10m Kp=72.0 Cgdmax=1.0n Cgdmin=0.25n Cgs=1.7n Cjo=0.50n Is=50p mfg=International_Rectifier Vds=-30 Ron=19m Qg=25n)
.model Si7540DP_P VDMOS(pchan Rg=3 Vto=-1.3 Rd=16.0m Rs=12.0m Rb=20m Kp=30.0 Cgdmax=0.6n Cgdmin=0.14n Cgs=0.9n Cjo=0.28n Is=28p mfg=International_Rectifier Vds=-12 Ron=40m Qg=14n)
.model Si7540DP_N VDMOS(Rg=3 Vto=1.4 Rd=8.0m Rs=6.0m Rb=10m Kp=70.0 Cgdmax=0.5n Cgdmin=0.12n Cgs=0.8n Cjo=0.24n Is=24p mfg=International_Rectifier Vds=12 Ron=20m Qg=12n)
.model SUD40N04-10A VDMOS(Rg=3 Vto=2.9 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=1.4n Cgdmin=0.20n Cgs=1.8n Cjo=0.70n Is=70p mfg=Siliconix Vds=40 Ron=10m Qg=35n)
.model IRF7831 VDMOS(Rg=3 Vto=2.35 Rd=1.4m Rs=1.1m Rb=2m Kp=102.8 Cgdmax=1.6n Cgdmin=0.40n Cgs=2.7n Cjo=0.80n Is=80p mfg=International_Rectifier Vds=30 Ron=3.6m Qg=40n)
.model NTLMS4502N VDMOS(Rg=3 Vto=1.5 Rd=3.2m Rs=2.4m Rb=4m Kp=94.0 Cgdmax=0.1n Cgdmin=0.03n Cgs=0.2n Cjo=0.06n Is=6p mfg=Onsemi Vds=24 Ron=8m Qg=3n)
.model NTLMS4504N VDMOS(Rg=3 Vto=1.5 Rd=1.5m Rs=1.1m Rb=2m Kp=102.6 Cgdmax=1.0n Cgdmin=0.24n Cgs=1.6n Cjo=0.48n Is=48p mfg=Onsemi Vds=24 Ron=3.7m Qg=24n)
.model PH2625L VDMOS(Rg=3 Vto=1.5 Rd=1.1m Rs=0.8m Rb=1m Kp=104.6 Cgdmax=1.3n Cgdmin=0.32n Cgs=2.1n Cjo=0.64n Is=64p mfg=Philips Vds=25 Ron=2.7m Qg=32n)
.model PH6325L VDMOS(Rg=3 Vto=1.5 Rd=2.5m Rs=1.9m Rb=3m Kp=97.4 Cgdmax=0.5n Cgdmin=0.13n Cgs=0.9n Cjo=0.26n Is=26p mfg=Philips Vds=25 Ron=6.3m Qg=13n)
.model HAT2044R VDMOS(Rg=3 Vto=1 Rd=2.8m Rs=2.1m Rb=4m Kp=120 Cgdmax=1.9n Cgdmin=0.48n Cgs=3n Cjo=0.96n Is=96p mfg=Renesas Vds=30 Ron=7m Qg=48n)
.model HAT1023R VDMOS(pchan Rg=3 Vto=-1.4 Rd=12.0m Rs=9.0m Rb=15m Kp=50.0 Cgdmax=1.2n Cgdmin=0.30n Cgs=2.0n Cjo=0.60n Is=60p mfg=Renesas Vds=-20 Ron=30m Qg=30n)
.model IRF7335 VDMOS(Rg=3 Vto=1.9 Rd=5.2m Rs=3.9m Rb=7m Kp=84.0 Cgdmax=0.7n Cgdmin=0.2n Cgs=1.5n Cjo=0.26n Is=26p mfg=International_Rectifier Vds=30 Ron=13m Qg=13n)
.model IRF6609 VDMOS(Rg=3 Vto=2.6 Rd=0.8m Rs=0.6m Rb=1m Kp=106.0 Cgdmax=1.8n Cgdmin=0.86n Cgs=5.1n Cjo=0.92n Is=92p mfg=International_Rectifier Vds=20 Ron=2m Qg=46n)
.model IRF6620 VDMOS(Rg=3 Vto=2.5 Rd=1.1m Rs=0.8m Rb=1m Kp=104.6 Cgdmax=1.5n Cgdmin=0.6n Cgs=3n Cjo=0.56n Is=56p mfg=International_Rectifier Vds=20 Ron=2.7m Qg=28n)
.model IRF6623 VDMOS(Rg=3 Vto=2.35 Rd=2.3m Rs=1.7m Rb=3m Kp=98.6 Cgdmax=0.5n Cgdmin=0.2n Cgs=1.4n Cjo=0.22n Is=22p mfg=International_Rectifier Vds=20 Ron=5.7m Qg=11n)
.model IRF6691 VDMOS(Rg=3 Vto=2.5 Rd=0.7m Rs=0.5m Rb=1m Kp=106.4 Cgdmax=1.9n Cgdmin=0.7n Cgs=6.1n Cjo=0.94n Is=94p mfg=International_Rectifier Vds=20 Ron=1.8m Qg=47n)
.model FDZ5047N VDMOS(Rg=3 Vto=1.5 Rd=1.8m Rs=1.4m Rb=2m Kp=100 Cgdmax=5n Cgdmin=0.5n Cgs=3.5n Cjo=1.04n Is=104p mfg=Fairchild Vds=30 Ron=4.5m Qg=52n)
.model FDZ7064N VDMOS(Rg=3 Vto=1.4 Rd=3.2m Rs=2.4m Rb=4m Kp=90 Cgdmax=3.5n Cgdmin=0.2n Cgs=2.5n Cjo=0.62n Is=62p mfg=Fairchild Vds=30 Ron=8m Qg=31n)
.model Si7852DP VDMOS(Rg=4 Vto=4.1 Rd=6.4m Rs=4.8m Rb=8m Kp=78.0 Cgdmax=1.4n Cgdmin=0.1n Cgs=1.5n Cjo=0.68n Is=68p mfg=Siliconix Vds=80 Ron=16m Qg=34n)
.model Si4490DY VDMOS(Rg=3 Vto=4 Rd=32.0m Rs=24.0m Rb=40m Kp=30.0 Cgdmax=1n Cgdmin=0.08n Cgs=1.7n Cjo=0.45n Is=68p mfg=Siliconix Vds=200 Ron=80m Qg=34n)
.model Si4408DY VDMOS(Rg=3 Vto=2.1 Rd=1.8m Rs=1.4m Rb=2m Kp=50 Cgdmax=1.2n Cgdmin=0.5n Cgs=2.5n Cjo=0.6n Is=42p mfg=Siliconix Vds=20 Ron=4.5m Qg=21n)
.model IXFX90N30 VDMOS(Rg=3 Vto=3.6 Rd=13.2m Rs=9.9m Rb=17m Kp=90 Cgdmax=30n Cgdmin=10n Cgs=100n Cjo=30n Is=720p mfg=IXYS Vds=300 Ron=33m Qg=360n)
.model IRF1302 VDMOS(Rg=3 Vto=4 Rd=1.6m Rs=1.2m Rb=2m Kp=50 Cgdmax=5n Cgdmin=1n Cgs=2n Cjo=1n Is=160p mfg=International_Rectifier Vds=20 Ron=4m Qg=80n)
.model FDR4420A VDMOS(Rg=3 Vto=2.2 Rd=3.6m Rs=2.7m Rb=5m Kp=92.0 Cgdmax=1.6n Cgdmin=0.6n Cgs=2.2n Cjo=0.46n Is=46p mfg=Fairchild Vds=30 Ron=9m Qg=23n)
.model FDR6580 VDMOS(Rg=3 Vto=1 Rd=3.6m Rs=2.7m Rb=5m Kp=120 Cgdmax=2.8n Cgdmin=0.6n Cgs=2.7n Cjo=0.68n Is=68p mfg=Fairchild Vds=20 Ron=9m Qg=34n)
.model IRF9540 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=300 Phi=.6 Rs=64.15m Kp=10.18u W=1.5 L=2u Vto=-3.646 Rd=62.45m Rds=444.4K Cbd=2.029n Pb=.8 Mj=.5 Fc=.5 Cgso=1.033n Cgdo=469.4p Rg=.3371 Is=54.08E-18 N=2 Tt=140n)
.model IRF540 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136 Rd=22.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n Cgdo=445.7p Rg=5.557 Is=2.859p N=1 Tt=142n)
.model IRF530 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=58.53m Kp=20.73u W=.68 L=2u Vto=3.191 Rd=38.69m Rds=444.4K Cbd=1.151n Pb=.8 Mj=.5 Fc=.5 Cgso=876.7p Cgdo=261.4p Rg=4.63 Is=1.861p N=1 Tt=125n)
.model IRF9530 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=300 Phi=.6 Rs=.1576 Kp=10.57u W=1.4 L=2u Vto=-3.745 Rd=66.13m Rds=444.4K Cbd=1.249n Pb=.8 Mj=.5 Fc=.5 Cgso=1.578n Cgdo=115.5p Rg=3.519 Is=2.938E-18 N=2 Tt=290n)
.model IRF740 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=8.563m Kp=20.59u W=.78 L=2u Vto=3.657 Rd=.3915 Rds=1.778MEG Cbd=1.419n Pb=.8 Mj=.5 Fc=.5 Cgso=1.392n Cgdo=146.6p Rg=.9088 Is=17.65p N=1 Tt=570n)
.model IRF820 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=9.112m Kp=20.23u W=.2 L=2u Vto=3.858 Rd=1.962 Rds=2.222MEG Cbd=405.1p Pb=.8 Mj=.5 Fc=.5 Cgso=1.956n Cgdo=136.9p Rg=.9792 Is=248.6p N=1 Tt=560n)
.MODEL 2SJ162 PMOS (VTO=842.193M KP=20U L=2U W=21.3317M GAMMA=0 PHI=600M LAMBDA=20.7067M RD=837.199M CBD=2.96862N IS=10F CGSO=1.13517N CGDO=1.13517N TOX=0 NSUB=0 TPG=1 UO=600 RG=50 RDS=1MEG )
.MODEL DN2540 NMOS (LEVEL=3 RS=1.05 NSUB=5.0E14 DELTA=0.1 KAPPA=0.20 TPG=1 CGDO=3.1716E-10 RD=11 VTO=-1.50 VMAX=1.0E7 ETA=0.0223089 NFS=6.6E10 TOX=725E-10 LD=1.698E-9 UO=862.425 XJ=6.4666E-7 THETA=1.0E-5 CGSO=2.50E-9 L=4.0E-6 W=59E-3)
.model FDS6680A VDMOS(Rg=3 Rd=5m Rs=1m Vto=2.2 Kp=63 Cgdmax=2n Cgdmin=1n Cgs=1.9n Cjo=1n Is=2.3p Rb=6m mfg=Fairchild Vds=30 Ron=15m Qg=27n)
.model IRF7201 VDMOS(Rg=3 Rs=12m Rd=5m Vto=2.64 Kp=26 Cgdmax=650p Cgdmin=135p Cgs=620p Cjo=620p a=1.5 Is=2.4p Rb=11m N=1.07 mfg=International_Rectifier Vds=30 Ron=30m Qg=28n)
.model IRF7303 VDMOS(Rg=3 Rs=30m Rd=10m Vto=2.3 Kp=15 Cgdmax=800p Cgdmin=10p Cgs=500p Cjo=500p a=1.5 Is=39p Rb=66m N=1.24 Vds=30 Ron=50m Qg=25n mfg=International_Rectifier)
.model NDS9410A VDMOS(Rg=3 Rs=15m Rd=8m Vto=2.7 Kp=24.5 Cgdmax=950p Cgdmin=320p Cgs=1020p Cjo=940p a=0.1 Is=.82p Rb=12m N=1.02 mfg=Fairchild Vds=30 Ron=42m Qg=50n)
.model Si4410DY VDMOS(Rg=3 Rd=3m Rs=3m Vto=2.6 Kp=60 Cgdmax=1.9n Cgdmin=50p Cgs=3.1n Cjo=1n Is=5.5p Rb=5.7m mfg=Siliconix Vds=30 Ron=15m Qg=60n)
.model Si4412DY VDMOS(Rg=3 Rd=5m Rs=8m Vto=2.5 Kp=27 Cgdmax=820p Cgdmin=50p Cgs=1050p Cjo=1000p Is=.365n Rb=0.00719 N=1.27 mfg=Siliconix Vds=30 Ron=30m Qg=29n)
.model Si4420DY VDMOS(Rg=3 Rd=2m Rs=2m Vto=2.7 Kp=100 Cgdmax=1.5n Cgdmin=200p Cgs=4.8n Cjo=2n Is=11p Rb=3.9m N=1.07 mfg=Siliconix Vds=30 Ron=13m Qg=53n)
.model Si9936DY VDMOS(Rg=3 Rd=10m Rs=2m Vto=2.3 Kp=11 Cgdmax=580p Cgdmin=20p Cgs=560p Cjo=800p Is=7.94p Rb=16.9m mfg=Siliconix Vds=30 Ron=80m Qg=35n)
.model SUD40N10-25 VDMOS(Rg=3 Rd=10m Rs=5m Vto=2.3 Kp=70 lambda=.01 Cgdmax=2n Cgdmin=100p Cgs=1.9n Cjo=1.25n Is=0.0055n Rb=0.005 mfg=Siliconix Vds=100 Ron=25m Qg=60n)
.model FDC638P VDMOS(pchan Rg=3 Rd=14m Rs=11m Vto=-1.1 Kp=22 cgdmax=1.1n cgdmin=0.08n cgs=1.0n Cjo=1n Is=5pA Rb=21m N=1.0 mfg=Fairchild Vds=-20 Ron=39m Qg=13n)
.model FDS6375 VDMOS(pchan Rg=3 Rd=8m Rs=6m Vto=-1.05 Kp=52 cgdmax=1.5n cgdmin=.4n cgs=1.9n Cjo=1n Is=0.48nA Rb=19.4m N=1.13 mfg=Fairchild Vds=-20 Ron=19m Qg=23n)
.model FDS6575 VDMOS(pchan Rg=3 Rd=4m Rs=2.4m Vto=-1.08 Kp=100 cgdmax=4.4n cgdmin=0.5n cgs=3.6n Cjo=1n Is=0.1nA Rb=10m N=1.0 mfg=Fairchild Vds=-20 Ron=10m Qg=50n)
.model Si9803DY VDMOS(pchan Rg=3 Rd=16m Rs=3m Vto=-1.4 Kp=22 cgdmax=1.4n cgdmin=.30n cgs=1.1n Cjo=1n Is=0.023nA Rb=9.6m N=1.09 mfg=Siliconix Vds=-25 Ron=33m Qg=15.8n)
.model SI3443DV VDMOS(pchan Rg=3 Rd=22m Rs=8m Vto=-1.05 Kp=12.2 cgdmax=.32n cgdmin=.16n cgs=1.1n Cjo=1n Is=0.011nA Rb=0.022 N=1.12 mfg=Siliconix Vds=-20 Ron=58m Qg=8.5n)
.model SI3445DV VDMOS(pchan Rg=3 Rd=15m Rs=6m Vto=-.85 Kp=18 cgdmax=1.0n cgdmin=.44n cgs=1.2n Cjo=.1n Is=.045nA Rb=0.026 N=1.127 mfg=Siliconix Vds=-8 Ron=34m Qg=15n)
.model FDS6570A VDMOS(Rg=3 Rd=3.0m Rs=2.3m Vto=2 Kp=95 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=3.8m mfg=Fairchild Vds=20 Ron=7.5m Qg=47n)
.model FDS6890A VDMOS(Rg=3 Rd=7.6m Rs=5.7m Vto=2 Kp=72 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=9.5m mfg=Fairchild Vds=20 Ron=19m Qg=23n)
.model FDS6670A VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.3n Cjo=0.70n Is=70p Rb=5.0m mfg=Fairchild Vds=30 Ron=10m Qg=35n)
.model FDS6680 VDMOS(Rg=3 Rd=6.0m Rs=4.5m Vto=2 Kp=80 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=7.5m mfg=Fairchild Vds=30 Ron=15m Qg=19n)
.model FDS6690A VDMOS(Rg=3 Rd=6.8m Rs=5.1m Vto=2 Kp=76 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=8.5m mfg=Fairchild Vds=30 Ron=17m Qg=17n)
.model FDS4410 VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=10.0m mfg=Fairchild Vds=30 Ron=20m Qg=13n)
.model FDS6614A VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=0.5n Cgdmin=0.06n Cgs=0.8n Cjo=0.24n Is=24p Rb=12.5m mfg=Fairchild Vds=30 Ron=25m Qg=12n)
.model FDS6612A VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=15.0m mfg=Fairchild Vds=30 Ron=30m Qg=9n)
.model FDS6912A VDMOS(Rg=3 Rd=14.0m Rs=10.5m Vto=2 Kp=40 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=17.5m mfg=Fairchild Vds=30 Ron=35m Qg=9n)
.model FDS6912 VDMOS(Rg=3 Rd=16.8m Rs=12.6m Vto=2 Kp=26 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.14n Is=14p Rb=21.0m mfg=Fairchild Vds=30 Ron=42m Qg=7n)
.model FDS6630A VDMOS(Rg=3 Rd=21.2m Rs=15.9m Vto=2 Kp=4 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.3n Cjo=0.10n Is=10p Rb=26.5m mfg=Fairchild Vds=30 Ron=53m Qg=5n)
.model FDS6930A VDMOS(Rg=3 Rd=22.0m Rs=16.5m Vto=2 Kp=0 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.3n Cjo=0.10n Is=10p Rb=27.5m mfg=Fairchild Vds=30 Ron=55m Qg=5n)
.model FDS6961A VDMOS(Rg=3 Rd=56.0m Rs=42.0m Vto=2 Kp=5 Cgdmax=0.1n Cgdmin=0.01n Cgs=0.1n Cjo=0.04n Is=4p Rb=70.0m mfg=Fairchild Vds=30 Ron=140m Qg=2n)
.model FDS5680 VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=12.5m mfg=Fairchild Vds=60 Ron=25m Qg=30n)
.model FDS5690 VDMOS(Rg=3 Rd=13.2m Rs=9.9m Vto=2 Kp=44 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=16.5m mfg=Fairchild Vds=60 Ron=33m Qg=23n)
.model FDS3570 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=2.2n Cgdmin=0.27n Cgs=3.6n Cjo=1.08n Is=108p Rb=11.0m mfg=Fairchild Vds=80 Ron=22m Qg=54n)
.model FDS3580 VDMOS(Rg=3 Rd=12.4m Rs=9.3m Vto=2 Kp=48 Cgdmax=1.4n Cgdmin=0.17n Cgs=2.3n Cjo=0.68n Is=68p Rb=15.5m mfg=Fairchild Vds=80 Ron=31m Qg=34n)
.model Si4836DY VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=2 Kp=104 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=1.5m mfg=Siliconix Vds=12 Ron=3m Qg=36n)
.model Si4838DY VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=2 Kp=104 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=1.5m mfg=Siliconix Vds=12 Ron=3m Qg=40n)
.model Si4866DY VDMOS(Rg=3 Rd=2.2m Rs=1.7m Vto=2 Kp=99 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=2.8m mfg=Siliconix Vds=12 Ron=5.5m Qg=21n)
.model Si4862DY VDMOS(Rg=3 Rd=1.3m Rs=1.0m Vto=2 Kp=103 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=1.7m mfg=Siliconix Vds=16 Ron=3.3m Qg=47n)
.model Si4864DY VDMOS(Rg=3 Rd=1.4m Rs=1.1m Vto=2 Kp=103 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=1.8m mfg=Siliconix Vds=20 Ron=3.5m Qg=47n)
.model Si4876DY VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.10n Is=110p Rb=2.5m mfg=Siliconix Vds=20 Ron=5m Qg=55n)
.model Si4466DY VDMOS(Rg=3 Rd=3.6m Rs=2.7m Vto=2 Kp=92 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=1.00n Is=100p Rb=4.5m mfg=Siliconix Vds=20 Ron=9m Qg=50n)
.model Si9426DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=6.5m mfg=Siliconix Vds=20 Ron=13m Qg=47n)
.model Si4426DY VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=12.5m mfg=Siliconix Vds=20 Ron=25m Qg=25n)
.model Si9428DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=15.0m mfg=Siliconix Vds=20 Ron=30m Qg=21n)
.model Si9804DY VDMOS(Rg=3 Rd=9.2m Rs=6.9m Vto=2 Kp=64 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.27n Is=27p Rb=11.5m mfg=Siliconix Vds=25 Ron=23m Qg=13.5n)
.model Si4442DY VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=2.5m mfg=Siliconix Vds=30 Ron=5m Qg=36n)
.model Si4364DY VDMOS(Rg=3 Rd=2.2m Rs=1.7m Vto=2 Kp=99 Cgdmax=2.5n Cgdmin=0.31n Cgs=4.1n Cjo=1.24n Is=124p Rb=2.8m mfg=Siliconix Vds=30 Ron=5.5m Qg=62n)
.model Si4842DY VDMOS(Rg=3 Rd=2.4m Rs=1.8m Vto=2 Kp=98 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=3.0m mfg=Siliconix Vds=30 Ron=6m Qg=25n)
.model Si4362DY VDMOS(Rg=3 Rd=2.5m Rs=1.9m Vto=2 Kp=98 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=3.1m mfg=Siliconix Vds=30 Ron=6.25m Qg=40n)
.model Si4404DY VDMOS(Rg=3 Rd=3.2m Rs=2.4m Vto=2 Kp=94 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=4.0m mfg=Siliconix Vds=30 Ron=8m Qg=36n)
.model Si4430DY VDMOS(Rg=3 Rd=3.2m Rs=2.4m Vto=2 Kp=94 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=4.0m mfg=Siliconix Vds=30 Ron=8m Qg=36n)
.model Si4872DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=27n)
.model Si4874DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.3n Cjo=0.70n Is=70p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=35n)
.model Si4888DY VDMOS(Rg=3 Rd=4.0m Rs=3.0m Vto=2 Kp=90 Cgdmax=0.7n Cgdmin=0.08n Cgs=1.1n Cjo=0.33n Is=32.6p Rb=5.0m mfg=Siliconix Vds=30 Ron=10m Qg=16.3n)
.model Si4860DY VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=5.5m mfg=Siliconix Vds=30 Ron=11m Qg=13n)
.model Si4886DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=0.6n Cgdmin=0.07n Cgs=1.0n Cjo=0.29n Is=29p Rb=6.5m mfg=Siliconix Vds=30 Ron=13m Qg=14.5n)
.model Si4822DY VDMOS(Rg=3 Rd=6.0m Rs=4.5m Vto=2 Kp=80 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=7.5m mfg=Siliconix Vds=30 Ron=15m Qg=31n)
.model Si4884DY VDMOS(Rg=3 Rd=6.4m Rs=4.8m Vto=2 Kp=78 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.31n Is=30.6p Rb=8.0m mfg=Siliconix Vds=30 Ron=16m Qg=15.3n)
.model Si4894DY VDMOS(Rg=3 Rd=7.2m Rs=5.4m Vto=2 Kp=74 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=9.0m mfg=Siliconix Vds=30 Ron=18m Qg=20n)
.model Si4820DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=20n)
.model Si4882DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.27n Is=27p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=13.5n)
.model Si4890DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.6n Cgdmin=0.07n Cgs=0.9n Cjo=0.28n Is=28.4p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=14.2n)
.model Si4892DY VDMOS(Rg=3 Rd=8.0m Rs=6.0m Vto=2 Kp=70 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.4p Rb=10.0m mfg=Siliconix Vds=30 Ron=20m Qg=8.7n)
.model Si4416DY VDMOS(Rg=3 Rd=11.2m Rs=8.4m Vto=2 Kp=54 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=14.0m mfg=Siliconix Vds=30 Ron=28m Qg=13n)
.model Si4802DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=15.0m mfg=Siliconix Vds=30 Ron=30m Qg=13n)
.model Si4800DY VDMOS(Rg=3 Rd=7.2m Rs=5.4m Vto=2 Kp=74 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.4p Rb=9.0m mfg=Siliconix Vds=30 Ron=18m Qg=8.7n)
.model Si9410DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2 Kp=10 Cgdmax=1.0n Cgdmin=0.12n Cgs=1.6n Cjo=0.48n Is=48p Rb=25.0m mfg=Siliconix Vds=30 Ron=50m Qg=24n)
.model Si9436DY VDMOS(Rg=3 Rd=24.0m Rs=18.0m Vto=2 Kp=15 Cgdmax=0.6n Cgdmin=0.07n Cgs=0.9n Cjo=0.28n Is=28p Rb=30.0m mfg=Siliconix Vds=30 Ron=60m Qg=14n)
.model Si4840DY VDMOS(Rg=3 Rd=4.8m Rs=3.6m Vto=2 Kp=86 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.37n Is=37p Rb=6.0m mfg=Siliconix Vds=40 Ron=12m Qg=18.5n)
.model Si4470DY VDMOS(Rg=3 Rd=5.2m Rs=3.9m Vto=2 Kp=84 Cgdmax=1.8n Cgdmin=0.23n Cgs=3.1n Cjo=0.92n Is=92p Rb=6.5m mfg=Siliconix Vds=60 Ron=13m Qg=46n)
.model Si4450DY VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=15.0m mfg=Siliconix Vds=60 Ron=30m Qg=31n)
.model Si4850EY VDMOS(Rg=3 Rd=12.4m Rs=9.3m Vto=2 Kp=48 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=15.5m mfg=Siliconix Vds=60 Ron=31m Qg=18n)
.model Si4896DY VDMOS(Rg=3 Vto=2 Rd=8.8m Rs=6.6m Rb=11m Kp=66.0 Cgdmax=1.4n Cgdmin=0.34n Cgs=2.3n Cjo=0.68n Is=68p mfg=Siliconix Vds=80 Ron=22m Qg=34n)
.model Si4480DY VDMOS(Rg=3 Rd=16.0m Rs=12.0m Vto=2 Kp=30 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=20.0m mfg=Siliconix Vds=80 Ron=40m Qg=30n)
.model Si4980DY VDMOS(Rg=3 Rd=38.0m Rs=28.5m Vto=2 Kp=9 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=47.5m mfg=Siliconix Vds=80 Ron=95m Qg=15n)
.model Si4486EY VDMOS(Rg=3 Rd=11.2m Rs=8.4m Vto=2 Kp=54 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=14.0m mfg=Siliconix Vds=100 Ron=28m Qg=36n)
.model Si4484EY VDMOS(Rg=3 Rd=16.0m Rs=12.0m Vto=2 Kp=30 Cgdmax=1.0n Cgdmin=0.12n Cgs=1.6n Cjo=0.48n Is=48p Rb=20.0m mfg=Siliconix Vds=100 Ron=40m Qg=24n)
.model Si4482DY VDMOS(Rg=3 Rd=32.0m Rs=24.0m Vto=2 Kp=10 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=40.0m mfg=Siliconix Vds=100 Ron=80m Qg=30n)
.model Si4982DY VDMOS(Rg=3 Rd=72.0m Rs=54.0m Vto=2 Kp=7 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=90.0m mfg=Siliconix Vds=100 Ron=180m Qg=15n)
.model Si4848DY VDMOS(Rg=3 Rd=38.0m Rs=28.5m Vto=2 Kp=8 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=47.5m mfg=Siliconix Vds=150 Ron=95m Qg=17n)
.model Si4488DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2 Kp=10 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=25.0m mfg=Siliconix Vds=150 Ron=50m Qg=30n)
.model Si9420DY VDMOS(Rg=3 Rd=400.0m Rs=300.0m Vto=2 Kp=5 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.6n Cjo=0.17n Is=17.2p Rb=500.0m mfg=Siliconix Vds=200 Ron=1000m Qg=8.6n)
.model IRF7456 VDMOS(Rg=3 Rd=2.6m Rs=2.0m Vto=2 Kp=97 Cgdmax=1.6n Cgdmin=0.21n Cgs=2.7n Cjo=0.82n Is=82p Rb=3.3m mfg=International_Rectifier Vds=20 Ron=6.5m Qg=41n)
.model IRF7455 VDMOS(Rg=3 Rd=3.0m Rs=2.3m Vto=2 Kp=95 Cgdmax=1.5n Cgdmin=0.19n Cgs=2.5n Cjo=0.74n Is=74p Rb=3.8m mfg=International_Rectifier Vds=30 Ron=7.5m Qg=37n)
.model IRF7401 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=11.0m mfg=International_Rectifier Vds=20 Ron=22m Qg=40n)
.model IRF9410 VDMOS(Rg=3 Rd=12.0m Rs=9.0m Vto=2 Kp=50 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=15.0m mfg=International_Rectifier Vds=30 Ron=30m Qg=18n)
.model IRF7807 VDMOS(Rg=3 Rd=10.0m Rs=7.5m Vto=2 Kp=60 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=12.5m mfg=International_Rectifier Vds=30 Ron=25m Qg=17n)
.model IRF7403 VDMOS(Rg=3 Rd=8.8m Rs=6.6m Vto=2 Kp=66 Cgdmax=1.7n Cgdmin=0.21n Cgs=2.8n Cjo=0.84n Is=84p Rb=11.0m mfg=International_Rectifier Vds=30 Ron=22m Qg=42n)
.model IRF7413A VDMOS(Rg=3 Rd=5.4m Rs=4.1m Vto=2 Kp=83 Cgdmax=2.1n Cgdmin=0.26n Cgs=3.5n Cjo=1.04n Is=104p Rb=6.8m mfg=International_Rectifier Vds=30 Ron=13.5m Qg=52n)
.model IRF7413 VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=1.4n Cgdmin=0.17n Cgs=2.3n Cjo=0.68n Is=68p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=34n)
.model IRF7805 VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=1.2n Cgdmin=0.16n Cgs=2.1n Cjo=0.62n Is=62p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=31n)
.model IRF7809A VDMOS(Rg=3 Rd=3.4m Rs=2.6m Vto=2 Kp=93 Cgdmax=2.4n Cgdmin=0.31n Cgs=4.1n Cjo=1.22n Is=122p Rb=4.3m mfg=International_Rectifier Vds=30 Ron=8.5m Qg=61n)
.model IRF7811 VDMOS(Rg=3 Rd=3.4m Rs=2.6m Vto=2 Kp=93 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=4.3m mfg=International_Rectifier Vds=30 Ron=8.5m Qg=19n)
.model IRF7832 VDMOS(Rg=3 Rd=1.6m Rs=1.2m Vto=2.2 Kp=112 Cgdmax=2.4n Cgdmin=0.17n Cgs=4.3n Cjo=0.68n Is=68p Rb=2m mfg=International_Rectifier Vds=30 Ron=4m Qg=34n)
.model BSH114 VDMOS(Rg=3 Rd=0.2 Rs=0.2 Vto=3 Kp=1.5 Cgdmax=0.2n Cgdmin=0.02n Cgs=0.3n Cjo=0.09n Is=9.2p Rb=0.3 mfg=Philips Vds=100 Ron=0.5 Qg=4.6n)
.model IRF7205 VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=35.0m mfg=International_Rectifier Vds=-30 Ron=70m Qg=27n)
.model IRF7406 VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=1.4n Cgdmin=0.18n Cgs=2.4n Cjo=0.72n Is=72p Rb=22.5m mfg=International_Rectifier Vds=-30 Ron=45m Qg=36n)
.model IRF7207 VDMOS(pchan Rg=3 Rd=32.0m Rs=24.0m Vto=-1 Kp=8 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=40.0m mfg=International_Rectifier Vds=-20 Ron=80m Qg=15n)
.model IRF7204 VDMOS(pchan Rg=3 Rd=24.0m Rs=18.0m Vto=-1 Kp=15 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.50n Is=50p Rb=30.0m mfg=International_Rectifier Vds=-20 Ron=60m Qg=25n)
.model IRF7404 VDMOS(pchan Rg=3 Rd=16.0m Rs=12.0m Vto=-1 Kp=30 Cgdmax=1.6n Cgdmin=0.20n Cgs=2.7n Cjo=0.80n Is=80p Rb=20.0m mfg=International_Rectifier Vds=-20 Ron=40m Qg=40n)
.model Si9407AEY VDMOS(pchan Rg=3 Rd=60.0m Rs=45.0m Vto=-1 Kp=5 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.2n Cjo=0.36n Is=36p Rb=75.0m mfg=Siliconix Vds=-60 Ron=150m Qg=18n)
.model IRF7210 VDMOS(pchan Rg=3 Rd=2.0m Rs=1.5m Vto=-1 Kp=100 Cgdmax=8.5n Cgdmin=1.06n Cgs=14.1n Cjo=4.24n Is=424p Rb=2.5m mfg=International_Rectifier Vds=-12 Ron=5m Qg=212n)
.model IRF7233 VDMOS(pchan Rg=3 Rd=8.0m Rs=6.0m Vto=-1 Kp=70 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=0.98n Is=98p Rb=10.0m mfg=International_Rectifier Vds=-12 Ron=20m Qg=49n)
.model IRF7220 VDMOS(pchan Rg=3 Rd=4.8m Rs=3.6m Vto=-.75 Kp=86 Cgdmax=1.5n Cgdmin=4.25n Cgs=7n Cjo=1n Is=168p Rb=6.0m mfg=International_Rectifier Vds=-12 Ron=12m Qg=84n)
.model IRF7822 VDMOS(Rg=3 Rd=2.0m Rs=1.5m Vto=2 Kp=100 Cgdmax=1.8n Cgdmin=0.22n Cgs=2.9n Cjo=0.88n Is=88p Rb=2.5m mfg=International_Rectifier Vds=30 Ron=5m Qg=44n)
.model IRF7811AV VDMOS(Rg=3 Rd=4.4m Rs=3.3m Vto=2 Kp=88 Cgdmax=0.7n Cgdmin=0.09n Cgs=1.1n Cjo=0.34n Is=34p Rb=5.5m mfg=International_Rectifier Vds=30 Ron=11m Qg=17n)
.model FDS6576 VDMOS(pchan Rg=3 Rd=5.6m Rs=4.2m Vto=-1 Kp=82 Cgdmax=1.8n Cgdmin=0.22n Cgs=2.9n Cjo=0.88n Is=88p Rb=7.0m mfg=Fairchild Vds=-20 Ron=14m Qg=44n)
.model FDS6875 VDMOS(pchan Rg=3 Rd=12.0m Rs=9.0m Vto=-1 Kp=50 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=15.0m mfg=Fairchild Vds=-20 Ron=30m Qg=23n)
.model FDS9933A VDMOS(pchan Rg=3 Rd=30.0m Rs=22.5m Vto=-1 Kp=12 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.16n Is=16p Rb=37.5m mfg=Fairchild Vds=-20 Ron=75m Qg=8n)
.model FDS6675 VDMOS(pchan Rg=3 Rd=8.0m Rs=6.0m Vto=-1 Kp=70 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=10.0m mfg=Fairchild Vds=-30 Ron=20m Qg=30n)
.model FDS4435A VDMOS(pchan Rg=3 Rd=10.0m Rs=7.5m Vto=-1 Kp=60 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=12.5m mfg=Fairchild Vds=-30 Ron=25m Qg=21n)
.model FDS6685 VDMOS(pchan Rg=3 Rd=14.0m Rs=10.5m Vto=-1 Kp=40 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.38n Is=38p Rb=17.5m mfg=Fairchild Vds=-30 Ron=35m Qg=19n)
.model FDS6975 VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=0.6n Cgdmin=0.08n Cgs=1.0n Cjo=0.30n Is=30p Rb=22.5m mfg=Fairchild Vds=-30 Ron=45m Qg=15n)
.model FDS4953 VDMOS(pchan Rg=3 Rd=38.0m Rs=28.5m Vto=-1 Kp=9 Cgdmax=0.3n Cgdmin=0.04n Cgs=0.5n Cjo=0.16n Is=16p Rb=47.5m mfg=Fairchild Vds=-30 Ron=95m Qg=8n)
.model Si4465DY VDMOS(pchan Rg=3 Rd=3.6m Rs=2.7m Vto=-1 Kp=92 Cgdmax=3.2n Cgdmin=0.40n Cgs=5.3n Cjo=1.60n Is=160p Rb=4.5m mfg=Siliconix Vds=-8 Ron=9m Qg=80n)
.model Si4463DY VDMOS(pchan Rg=3 Rd=5.6m Rs=4.2m Vto=-1 Kp=82 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.2n Cjo=0.96n Is=96p Rb=7.0m mfg=Siliconix Vds=-20 Ron=14m Qg=48n)
.model Si4403DY VDMOS(pchan Rg=3 Rd=6.8m Rs=5.1m Vto=-1 Kp=76 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.61n Is=61p Rb=8.5m mfg=Siliconix Vds=-20 Ron=17m Qg=30.5n)
.model Si9424DY VDMOS(pchan Rg=3 Rd=10.0m Rs=7.5m Vto=-1 Kp=60 Cgdmax=1.8n Cgdmin=0.23n Cgs=3.1n Cjo=0.92n Is=92p Rb=12.5m mfg=Siliconix Vds=-20 Ron=25m Qg=46n)
.model Si9434DY VDMOS(pchan Rg=3 Rd=16.0m Rs=12.0m Vto=-1 Kp=30 Cgdmax=1.2n Cgdmin=0.15n Cgs=2.0n Cjo=0.60n Is=60p Rb=20.0m mfg=Siliconix Vds=-20 Ron=40m Qg=30n)
.model Si9433DY VDMOS(pchan Rg=3 Rd=18.0m Rs=13.5m Vto=-1 Kp=20 Cgdmax=0.8n Cgdmin=0.10n Cgs=1.3n Cjo=0.40n Is=40p Rb=22.5m mfg=Siliconix Vds=-20 Ron=45m Qg=20n)
.model Si4433DY VDMOS(pchan Rg=3 Vto=-1.2 Rd=44.0m Rs=33.0m Rb=55m Kp=30.0 Cgdmax=0.2n Cgdmin=0.07n Cgs=0.6n Cjo=0.2n Is=9p mfg=Siliconix Vds=-20 Ron=110m Qg=4.4n)
.model Si9400DY VDMOS(pchan Rg=3 Rd=160.0m Rs=120.0m Vto=-1 Kp=5 Cgdmax=0.2n Cgdmin=0.03n Cgs=0.4n Cjo=0.11n Is=10.8p Rb=200.0m mfg=Siliconix Vds=-20 Ron=400m Qg=5.4n)
.model Si4427DY VDMOS(pchan Rg=3 Rd=4.8m Rs=3.6m Vto=-1 Kp=86 Cgdmax=1.9n Cgdmin=0.24n Cgs=3.1n Cjo=0.94n Is=94p Rb=6.0m mfg=Siliconix Vds=-30 Ron=12m Qg=47n)
.model Si4825DY VDMOS(pchan Rg=3 Rd=8.8m Rs=6.6m Vto=-1 Kp=66 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.10n Is=110p Rb=11.0m mfg=Siliconix Vds=-30 Ron=22m Qg=55n)
.model Si4425DY VDMOS(pchan Rg=3 Rd=9.2m Rs=6.9m Vto=-1 Kp=64 Cgdmax=3.0n Cgdmin=0.37n Cgs=4.9n Cjo=1.48n Is=148p Rb=11.5m mfg=Siliconix Vds=-30 Ron=23m Qg=74n)
.model Si4835DY VDMOS(pchan Rg=3 Rd=13.2m Rs=9.9m Vto=-1 Kp=44 Cgdmax=0.8n Cgdmin=0.11n Cgs=1.4n Cjo=0.42n Is=42p Rb=16.5m mfg=Siliconix Vds=-30 Ron=33m Qg=21n)
.model Si4431DY VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=0.9n Cgdmin=0.11n Cgs=1.5n Cjo=0.44n Is=44p Rb=35.0m mfg=Siliconix Vds=-30 Ron=70m Qg=22n)
.model Si9435DY VDMOS(pchan Rg=3 Rd=28.0m Rs=21.0m Vto=-1 Kp=10 Cgdmax=1.1n Cgdmin=0.14n Cgs=1.8n Cjo=0.54n Is=54p Rb=35.0m mfg=Siliconix Vds=-30 Ron=70m Qg=27n)
.model Si4401DY VDMOS(pchan Rg=3 Rd=8.8m Rs=6.6m Vto=-1 Kp=66 Cgdmax=1.5n Cgdmin=0.19n Cgs=2.5n Cjo=0.74n Is=74p Rb=11.0m mfg=Siliconix Vds=-40 Ron=22m Qg=37n)
.model IRF7343N VDMOS(Rg=3 Rd=20m Rs=15m Vto=1 Kp=10 Cgdmax=1.4n Cgdmin=0.18n Cgs=0.8n Cjo=0.72n Is=72p Rb=25m mfg=International_Rectifier Vds=55 Ron=50m Qg=36n)
.model IRF7343P VDMOS(pchan Rg=3 Rd=42m Rs=31m Vto=-1 Kp=1 Cgdmax=1.5n Cgdmin=0.19n Cgs=0.83n Cjo=0.76n Is=76p Rb=52m mfg=International_Rectifier Vds=-55 Ron=105m Qg=38n)
.model Si4940DY VDMOS(Rg=3 Rd=20.0m Rs=15.0m Vto=2.7 Kp=15 Lambda=0.02 Cgdmax=0.4n Cgdmin=0.05n Cgs=0.6n Cjo=0.18n Is=18p Rb=25.0m mfg=Siliconix Vds=40 Ron=50m Qg=9n)
.model Si7868DP VDMOS(Rg=3 Rd=1.2m Rs=0.9m Vto=1.2 Kp=50 Cgdmax=2.0n Cgdmin=0.25n Cgs=3.3n Cjo=1n Is=100p Rb=1.5m mfg=Siliconix Vds=20 Ron=3m Qg=50n)
.model Si7866DP VDMOS(Rg=3 Rd=1.6m Rs=1.2m Vto=1.2 Kp=50 Cgdmax=1.6n Cgdmin=0.2n Cgs=2.7n Cjo=0.8n Is=80p Rb=2m mfg=Siliconix Vds=20 Ron=4m Qg=40n)
.model uPA1706 VDMOS(Rg=3 Rd=2.8m Rs=2.1m Vto=2 Kp=96 Cgdmax=2.2n Cgdmin=0.28n Cgs=3.7n Cjo=1.12n Is=112p Rb=3.5m mfg=NEC Vds=30 Ron=7m Qg=56n)
.model uPA1707 VDMOS(Rg=3 Rd=5m Rs=3.8m Vto=2 Kp=85 Cgdmax=1.0n Cgdmin=0.13n Cgs=1.7n Cjo=0.52n Is=52p Rb=6.3m mfg=NEC Vds=30 Ron=12.5m Qg=26n)
.model IRF7468 VDMOS(Rg=3 Rd=6.4m Rs=4.8m Vto=1.8 Kp=40 Cgdmax=0.9n Cgdmin=0.12n Cgs=1.5n Cjo=0.46n Is=46p Rb=8m mfg=International_Rectifier Vds=40 Ron=16m Qg=23n)
.model BSS123 VDMOS(Rg=3 Rd=2.4 Rs=1.8 Vto=1.6 Kp=1 Cgdmax=0.1n Cgdmin=0.01n Cgs=0.1n Cjo=0.03n Is=2.8p Rb=3.0 mfg=Fairchild Vds=100 Ron=6 Qg=1.4n)
.model FQB11P06 VDMOS(pchan Rg=3 Rd=70m Rs=52m Vto=-4 lambda=0.3 Kp=6 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=87m mfg=Fair Vds=-60 Ron=175m Qg=13n)
.model IRF1312S VDMOS(Rg=3 Rd=4m Rs=3m Vto=5.25 Kp=70 Cgdmax=3.7n Cgdmin=0.47n Cgs=6.2n Cjo=1.86n Is=186p Rb=5m mfg=International_Rectifier Vds=80 Ron=10m Qg=93n)
.model AO6408 VDMOS(Rg=3 Rd=4.8m Rs=3.6m Vto=1.0 Kp=90 Cgdmax=0.7n Cgdmin=0.25n Cgs=1n Cjo=0.36n Is=36p Rb=6m mfg=Alpha_&_Omega Vds=20 Ron=12m Qg=18n)
.model AO6407 VDMOS(pchan Rg=3 Rd=14m Rs=10m Vto=-0.8 Kp=32 Cgdmax=0.5n Cgdmin=0.07n Cgs=0.9n Cjo=0.26n Is=26p Rb=17m mfg=AO Vds=-20 Ron=34m Qg=13n)
.model FDC637AN VDMOS(Rg=3 Rd=9.6m Rs=7.2m Vto=1.1 Kp=62 Cgdmax=1.2n Cgdmin=0.05n Cgs=1.3n Cjo=0.21n Is=21p Rb=12m mfg=Fairchild Vds=20 Ron=24m Qg=10.5n)
.model Si3460DV VDMOS(Rg=3 Rd=12m Rs=9m Vto=1 Kp=100 Cgdmax=0.5n Cgdmin=0.07n Cgs=2n Cjo=0.27n Is=27p Rb=15m mfg=Siliconix Vds=20 Ron=30m Qg=13.5n)
.model FDS6574A VDMOS(Rg=3 Rd=3m Rs=2.3m Vto=0.65 Kp=95 Cgdmax=10n Cgdmin=0.38n Cgs=5n Cjo=1.5n Is=150p Rb=3.8m mfg=Fairchild Vds=20 Ron=7.5m Qg=75n)
.model HAT2164H VDMOS(Rg=0.50 Rd=1m Rs=0.8m Vto=2 lambda=0.05 Kp=105 Cgdmax=2n Cgdmin=0.6n Cgs=3.3n Cjo=1n Is=100p Rb=1.3m mfg=Renesas Vds=30Ron=2.5m Qg=50n)
.model HAT2165H VDMOS(Rg=0.50 Rd=1m Rs=0.8m Vto=2 lambda=0.05 Kp=105 Cgdmax=1.3n Cgdmin=0.33n Cgs=2.2n Cjo=.66n Is=66p Rb=1.3m mfg=Renesas Vds=30 Ron=2.5m Qg=33n)
.model HAT2166H VDMOS(Rg=0.50 Rd=1.2m Rs=0.9m Vto=2 lambda=0.08 Kp=114 Cgdmax=1.1n Cgdmin=0.27n Cgs=1.8n Cjo=.54n Is=54p Rb=1.5m mfg=Renesas Vds=30 Ron=2.9m Qg=27n)
.model HAT2167H VDMOS(Rg=0.50 Rd=1.7m Rs=1.3m Vto=2 lambda=0.05 Kp=102 Cgdmax=.7n Cgdmin=0.17n Cgs=1.1n Cjo=.34n Is=34p Rb=2.1m mfg=Renesas Vds=30 Ron=4.2m Qg=17n)
.model HAT2168H VDMOS(Rg=0.55 Rd=2.4m Rs=1.8m Vto=2 lambda=0.05 Kp=60 Cgdmax=0.4n Cgdmin=0.2n Cgs=.7n Cjo=.22n Is=20p Rb=3m mfg=Renesas Vds=30 Ron=6m Qg=11n)
.model HAT1072H VDMOS(pchan Rg=3 Rd=1.4m Rs=1.1m Vto=-2 Kp=103 lambda=0.03 Cgdmax=4.2n Cgdmin=0.5n Cgs=4.3n Cjo=3n Is=310p Rb=1.8m mfg=Renesas Vds=-30 Ron=3.6m Qg=155n)
.model IRF6607 VDMOS(Rg=3 Rd=1.5m Rs=1.1m Vto=2 lambda=0.15 Kp=50 Cgdmax=2.0n Cgdmin=0.5n Cgs=5.3n Cjo=1n Is=100p Rb=1.9m mfg=International_Rectifier Vds=30 Ron=3.8m Qg=50n)
.model IRF6618 VDMOS(Rg=3 Rd=1.1m Rs=0.8m Vto=2.2 lambda=0.05 Kp=50 Cgdmax=1.8n Cgdmin=0.16n Cgs=4.5n Cjo=0.92n Is=92p Rb=1.4m mfg=International_Rectifier Vds=30 Ron=2.8m Qg=46n)
.model Si4920DY VDMOS(Rg=3 Vto=2.8 Rd=12.0m Rs=9.0m Rb=15m Kp=50.0 Cgdmax=1.2n Cgdmin=0.10n Cgs=2.0n Cjo=0.60n Is=60p mfg=Siliconix Vds=30 Ron=30m Qg=30n)
.model BSS145 VDMOS(Rg=3 Vto=2.8 Rd=1.4 Rs=1 Rb=1.75 Kp=0.15 Cgdmax=0.08n Cgdmin=0.001n Cgs=0.01n Cjo=0.004n Is=0.5p mfg=Infineon Vds=100 Ron=3500m Qg=2n)
.model BSS84 VDMOS(pchan Rg=3 Vto=-2.1 Rd=2.4 Rs=1.8 Rb=3 Kp=0.2 Cgdmax=0.04n Cgdmin=0.001n Cgs=0.02n Cjo=0.01n Is=2p mfg=Philips Vds=-50 Ron=6000m Qg=1n)
.model SI4467DY VDMOS(pchan Rg=3 Vto=-0.7 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=3.4n Cgdmin=1.5n Cgs=10n Cjo=3.72n Is=172p mfg=Fairchild Vds=-20 Ron=10m Qg=86n)
.model IRLML2803 VDMOS(Rg=3 Vto=2.9 Rd=0.1 Rs=75.0m Rb=125m Kp=10.0 Cgdmax=0.15n Cgdmin=0.018n Cgs=0.13n Cjo=0.07n Is=7p mfg=International_Rectifier Vds=30 Ron=250m Qg=3.3n)
.model IRL3915 VDMOS(Rg=3 Vto=1.9 Rd=5.6m Rs=4.2m Rb=7m Kp=60 lambda=0.02 Cgdmax=2.4n Cgdmin=0.4n Cgs=4.1n Cjo=1.22n Is=122p mfg=International_Rectifier Vds=55 Ron=14m Qg=61n)
.model FDS4072N3 VDMOS(Rg=3 Vto=1.3 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=1.3n Cgdmin=0.3n Cgs=5.2n Cjo=0.66n Is=66p mfg=Fairchild Vds=40 Ron=10m Qg=33n)
.model Si7409DN VDMOS(pchan Rg=3 Vto=-0.8 Rd=7.6m Rs=5.7m Rb=10m Kp=72.0 Cgdmax=1.0n Cgdmin=0.25n Cgs=1.7n Cjo=0.50n Is=50p mfg=International_Rectifier Vds=-30 Ron=19m Qg=25n)
.model Si7540DP_P VDMOS(pchan Rg=3 Vto=-1.3 Rd=16.0m Rs=12.0m Rb=20m Kp=30.0 Cgdmax=0.6n Cgdmin=0.14n Cgs=0.9n Cjo=0.28n Is=28p mfg=International_Rectifier Vds=-12 Ron=40m Qg=14n)
.model Si7540DP_N VDMOS(Rg=3 Vto=1.4 Rd=8.0m Rs=6.0m Rb=10m Kp=70.0 Cgdmax=0.5n Cgdmin=0.12n Cgs=0.8n Cjo=0.24n Is=24p mfg=International_Rectifier Vds=12 Ron=20m Qg=12n)
.model SUD40N04-10A VDMOS(Rg=3 Vto=2.9 Rd=4.0m Rs=3.0m Rb=5m Kp=90.0 Cgdmax=1.4n Cgdmin=0.20n Cgs=1.8n Cjo=0.70n Is=70p mfg=Siliconix Vds=40 Ron=10m Qg=35n)
.model IRF7831 VDMOS(Rg=3 Vto=2.35 Rd=1.4m Rs=1.1m Rb=2m Kp=102.8 Cgdmax=1.6n Cgdmin=0.40n Cgs=2.7n Cjo=0.80n Is=80p mfg=International_Rectifier Vds=30 Ron=3.6m Qg=40n)
.model NTLMS4502N VDMOS(Rg=3 Vto=1.5 Rd=3.2m Rs=2.4m Rb=4m Kp=94.0 Cgdmax=0.1n Cgdmin=0.03n Cgs=0.2n Cjo=0.06n Is=6p mfg=Onsemi Vds=24 Ron=8m Qg=3n)
.model NTLMS4504N VDMOS(Rg=3 Vto=1.5 Rd=1.5m Rs=1.1m Rb=2m Kp=102.6 Cgdmax=1.0n Cgdmin=0.24n Cgs=1.6n Cjo=0.48n Is=48p mfg=Onsemi Vds=24 Ron=3.7m Qg=24n)
.model PH2625L VDMOS(Rg=3 Vto=1.5 Rd=1.1m Rs=0.8m Rb=1m Kp=104.6 Cgdmax=1.3n Cgdmin=0.32n Cgs=2.1n Cjo=0.64n Is=64p mfg=Philips Vds=25 Ron=2.7m Qg=32n)
.model PH6325L VDMOS(Rg=3 Vto=1.5 Rd=2.5m Rs=1.9m Rb=3m Kp=97.4 Cgdmax=0.5n Cgdmin=0.13n Cgs=0.9n Cjo=0.26n Is=26p mfg=Philips Vds=25 Ron=6.3m Qg=13n)
.model HAT2044R VDMOS(Rg=3 Vto=1 Rd=2.8m Rs=2.1m Rb=4m Kp=120 Cgdmax=1.9n Cgdmin=0.48n Cgs=3n Cjo=0.96n Is=96p mfg=Renesas Vds=30 Ron=7m Qg=48n)
.model HAT1023R VDMOS(pchan Rg=3 Vto=-1.4 Rd=12.0m Rs=9.0m Rb=15m Kp=50.0 Cgdmax=1.2n Cgdmin=0.30n Cgs=2.0n Cjo=0.60n Is=60p mfg=Renesas Vds=-20 Ron=30m Qg=30n)
.model IRF7335 VDMOS(Rg=3 Vto=1.9 Rd=5.2m Rs=3.9m Rb=7m Kp=84.0 Cgdmax=0.7n Cgdmin=0.2n Cgs=1.5n Cjo=0.26n Is=26p mfg=International_Rectifier Vds=30 Ron=13m Qg=13n)
.model IRF6609 VDMOS(Rg=3 Vto=2.6 Rd=0.8m Rs=0.6m Rb=1m Kp=106.0 Cgdmax=1.8n Cgdmin=0.86n Cgs=5.1n Cjo=0.92n Is=92p mfg=International_Rectifier Vds=20 Ron=2m Qg=46n)
.model IRF6620 VDMOS(Rg=3 Vto=2.5 Rd=1.1m Rs=0.8m Rb=1m Kp=104.6 Cgdmax=1.5n Cgdmin=0.6n Cgs=3n Cjo=0.56n Is=56p mfg=International_Rectifier Vds=20 Ron=2.7m Qg=28n)
.model IRF6623 VDMOS(Rg=3 Vto=2.35 Rd=2.3m Rs=1.7m Rb=3m Kp=98.6 Cgdmax=0.5n Cgdmin=0.2n Cgs=1.4n Cjo=0.22n Is=22p mfg=International_Rectifier Vds=20 Ron=5.7m Qg=11n)
.model IRF6691 VDMOS(Rg=3 Vto=2.5 Rd=0.7m Rs=0.5m Rb=1m Kp=106.4 Cgdmax=1.9n Cgdmin=0.7n Cgs=6.1n Cjo=0.94n Is=94p mfg=International_Rectifier Vds=20 Ron=1.8m Qg=47n)
.model FDZ5047N VDMOS(Rg=3 Vto=1.5 Rd=1.8m Rs=1.4m Rb=2m Kp=100 Cgdmax=5n Cgdmin=0.5n Cgs=3.5n Cjo=1.04n Is=104p mfg=Fairchild Vds=30 Ron=4.5m Qg=52n)
.model FDZ7064N VDMOS(Rg=3 Vto=1.4 Rd=3.2m Rs=2.4m Rb=4m Kp=90 Cgdmax=3.5n Cgdmin=0.2n Cgs=2.5n Cjo=0.62n Is=62p mfg=Fairchild Vds=30 Ron=8m Qg=31n)
.model Si7852DP VDMOS(Rg=4 Vto=4.1 Rd=6.4m Rs=4.8m Rb=8m Kp=78.0 Cgdmax=1.4n Cgdmin=0.1n Cgs=1.5n Cjo=0.68n Is=68p mfg=Siliconix Vds=80 Ron=16m Qg=34n)
.model Si4490DY VDMOS(Rg=3 Vto=4 Rd=32.0m Rs=24.0m Rb=40m Kp=30.0 Cgdmax=1n Cgdmin=0.08n Cgs=1.7n Cjo=0.45n Is=68p mfg=Siliconix Vds=200 Ron=80m Qg=34n)
.model Si4408DY VDMOS(Rg=3 Vto=2.1 Rd=1.8m Rs=1.4m Rb=2m Kp=50 Cgdmax=1.2n Cgdmin=0.5n Cgs=2.5n Cjo=0.6n Is=42p mfg=Siliconix Vds=20 Ron=4.5m Qg=21n)
.model IXFX90N30 VDMOS(Rg=3 Vto=3.6 Rd=13.2m Rs=9.9m Rb=17m Kp=90 Cgdmax=30n Cgdmin=10n Cgs=100n Cjo=30n Is=720p mfg=IXYS Vds=300 Ron=33m Qg=360n)
.model IRF1302 VDMOS(Rg=3 Vto=4 Rd=1.6m Rs=1.2m Rb=2m Kp=50 Cgdmax=5n Cgdmin=1n Cgs=2n Cjo=1n Is=160p mfg=International_Rectifier Vds=20 Ron=4m Qg=80n)
.model FDR4420A VDMOS(Rg=3 Vto=2.2 Rd=3.6m Rs=2.7m Rb=5m Kp=92.0 Cgdmax=1.6n Cgdmin=0.6n Cgs=2.2n Cjo=0.46n Is=46p mfg=Fairchild Vds=30 Ron=9m Qg=23n)
.model FDR6580 VDMOS(Rg=3 Vto=1 Rd=3.6m Rs=2.7m Rb=5m Kp=120 Cgdmax=2.8n Cgdmin=0.6n Cgs=2.7n Cjo=0.68n Is=68p mfg=Fairchild Vds=20 Ron=9m Qg=34n)
.model IRF9540 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=300 Phi=.6 Rs=64.15m Kp=10.18u W=1.5 L=2u Vto=-3.646 Rd=62.45m Rds=444.4K Cbd=2.029n Pb=.8 Mj=.5 Fc=.5 Cgso=1.033n Cgdo=469.4p Rg=.3371 Is=54.08E-18 N=2 Tt=140n)
.model IRF540 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136 Rd=22.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n Cgdo=445.7p Rg=5.557 Is=2.859p N=1 Tt=142n)
.model IRF530 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=58.53m Kp=20.73u W=.68 L=2u Vto=3.191 Rd=38.69m Rds=444.4K Cbd=1.151n Pb=.8 Mj=.5 Fc=.5 Cgso=876.7p Cgdo=261.4p Rg=4.63 Is=1.861p N=1 Tt=125n)
.model IRF9530 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=100n Uo=300 Phi=.6 Rs=.1576 Kp=10.57u W=1.4 L=2u Vto=-3.745 Rd=66.13m Rds=444.4K Cbd=1.249n Pb=.8 Mj=.5 Fc=.5 Cgso=1.578n Cgdo=115.5p Rg=3.519 Is=2.938E-18 N=2 Tt=290n)
.model IRF740 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=8.563m Kp=20.59u W=.78 L=2u Vto=3.657 Rd=.3915 Rds=1.778MEG Cbd=1.419n Pb=.8 Mj=.5 Fc=.5 Cgso=1.392n Cgdo=146.6p Rg=.9088 Is=17.65p N=1 Tt=570n)
.model IRF820 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0 Tox=100n Uo=600 Phi=.6 Rs=9.112m Kp=20.23u W=.2 L=2u Vto=3.858 Rd=1.962 Rds=2.222MEG Cbd=405.1p Pb=.8 Mj=.5 Fc=.5 Cgso=1.956n Cgdo=136.9p Rg=.9792 Is=248.6p N=1 Tt=560n)
.MODEL 2SJ162 PMOS (VTO=842.193M KP=20U L=2U W=21.3317M GAMMA=0 PHI=600M LAMBDA=20.7067M RD=837.199M CBD=2.96862N IS=10F CGSO=1.13517N CGDO=1.13517N TOX=0 NSUB=0 TPG=1 UO=600 RG=50 RDS=1MEG )
.MODEL DN2540 NMOS (LEVEL=3 RS=1.05 NSUB=5.0E14 DELTA=0.1 KAPPA=0.20 TPG=1 CGDO=3.1716E-10 RD=11 VTO=-1.50 VMAX=1.0E7 ETA=0.0223089 NFS=6.6E10 TOX=725E-10 LD=1.698E-9 UO=862.425 XJ=6.4666E-7 THETA=1.0E-5 CGSO=2.50E-9 L=4.0E-6 W=59E-3)